Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy
LIU Xiao-Jun1,2, MORITOMO Yutaka2
1Laboratory of Modern Acoustics and Institute of Acoustics, Nanjing University, Nanjing 210093
2Department of Applied Physics, Nagoya University, Nagoya 464-8601, Japan
Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy
LIU Xiao-Jun1,2;MORITOMO Yutaka2
1Laboratory of Modern Acoustics and Institute of Acoustics, Nanjing University, Nanjing 210093
2Department of Applied Physics, Nagoya University, Nagoya 464-8601, Japan
Abstract：Effects of hydrostatic pressure on the mixed-valence (MV) bismuth complex BaBiO3 have been investigated up to ～9 GPa by means of high-pressure Raman scattering and absorption spectra at 300 K. The pressure-induced hardening behaviour of the Bi-O stretching mode suggests that the predicted pressure-induced MV to the single-valence (SV) phase change cannot occur. Investigation of absorption spectra with pressure shows the enhanced optical gap Egap, which further indicates the remained MV state of Bi ions.
(Absorption and reflection spectra: visible and ultraviolet)
引用本文:
LIU Xiao-Jun;MORITOMO Yutaka. Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy[J]. 中国物理快报, 2003, 20(11): 2027-2029.
LIU Xiao-Jun, MORITOMO Yutaka. Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy. Chin. Phys. Lett., 2003, 20(11): 2027-2029.
2003, Vol. 20 
