Temperature-Dependent Photoluminescence of ZnTe Films Grown on
Si Substrates
SHAN Chong-Xin, FAN Xi-Wu, ZHANG Ji-Ying, ZHANG Zhen-Zhong, LU You-Ming, LIU Yi-Chun, SHEN De-Zhen
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
Temperature-Dependent Photoluminescence of ZnTe Films Grown on
Si Substrates
SHAN Chong-Xin;FAN Xi-Wu;ZHANG Ji-Ying;ZHANG Zhen-Zhong;LU You-Ming;LIU Yi-Chun;SHEN De-Zhen
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
关键词 ：
78.55.Et ,
78.66.Hf ,
81.15.Gh
Abstract ： ZnTe films have been prepared on Si substrates by metal-organic
Key words ：
78.55.Et
78.66.Hf
81.15.Gh
出版日期: 2003-11-01
:
78.55.Et
(II-VI semiconductors)
78.66.Hf
(II-VI semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
SHAN Chong-Xin;FAN Xi-Wu;ZHANG Ji-Ying;ZHANG Zhen-Zhong;LU You-Ming;LIU Yi-Chun;SHEN De-Zhen. Temperature-Dependent Photoluminescence of ZnTe Films Grown on
Si Substrates[J]. 中国物理快报, 2003, 20(11): 2049-2052.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I11/2049
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2003, Vol. 20 
