Polycrystalline β-C3 N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering
ZHANG Ze-bo, LI Yin-an, XIE Si-shen, YANG Guo-zhen
Institute of Physics, Academia Sinica, Beijing 100080
Polycrystalline β-C3 N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering
ZHANG Ze-bo;LI Yin-an;XIE Si-shen;YANG Guo-zhen
Institute of Physics, Academia Sinica, Beijing 100080
关键词 ：
81.15.Cd ,
68.55.Gi
Abstract ： The carbon-nitride thin films were deposited on the (100) oriented single-crystal KCl wafers at ambient temperatures by using rf-plasma sputtering. The IR spectrum showed that the films contained carbon-nitride bonds. The transmission electron microscopy (TEM) and x.-ray diffraction (XRD) measurements indicated the existence of predicted polycrystalline β-C3 N4 films on the KCl(I00) wafers. And the TEM and XRD measured lattice spacings well match the calculated data.
Key words ：
81.15.Cd
68.55.Gi
出版日期: 1996-01-01
引用本文:
ZHANG Ze-bo;LI Yin-an;XIE Si-shen;YANG Guo-zhen. Polycrystalline β-C3 N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering[J]. 中国物理快报, 1996, 13(1): 69-72.
3 N4 Thin Films Deposited on Single-Crystal KCl(100) Using rf Sputtering. Chin. Phys. Lett., 1996, 13(1): 69-72.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I1/69
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1996, Vol. 13 
