A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering
XU Jun, MA Teng-Cai, LU Wen-Qi,XIA Yuan-Liang, DENG Xin-Lu
State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024
A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering
State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024
Abstract： A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CNx films has been prepared by using this system. The characterization of the films by interference microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy shows that the deposition rate is strongly affected by the direct-current bias, and the films are composed by a single carbon nitride phase and the N/C ratio is 4:3.2, which is close to that of C3N4 (4:3).
XU Jun;MA Teng-Cai;LU Wen-Qi;XIA Yuan-Liang;DENG Xin-Lu. A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering[J]. 中国物理快报, 2000, 17(8): 586-588.
XU Jun, MA Teng-Cai, LU Wen-Qi, XIA Yuan-Liang, DENG Xin-Lu. A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering. Chin. Phys. Lett., 2000, 17(8): 586-588.
2000, Vol. 17 
