中国物理快报  2023, Vol. 40 Issue (8): 86801-    DOI: 10.1088/0256-307X/40/8/086801
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Ambipolar Doping of Monolayer FeSe by Interface Engineering
Fang-Jun Cheng1, Yi-Min Zhang1, Jia-Qi Fan1, Can-Li Song1,2*, Xu-Cun Ma1,2, and Qi-Kun Xue1,2,3,4
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
2Frontier Science Center for Quantum Information, Beijing 100084, China
3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
4Southern University of Science and Technology, Shenzhen 518055, China