Self-Oscillated Growth Formation of Standing Ultrathin Nanosheets out of Uniform Ge/Si Superlattice Nanowires
Xin Gan, Junyang An, Junzhuan Wang* , Zongguang Liu, Jun Xu, Yi Shi, Kunji Chen, and Linwei Yu*
School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
Abstract ：Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures. A self-oscillating growth phenomenon of catalyst droplets, consuming surface-coating a-Si/a-Ge bilayer, is exploited to accomplish a high-frequency alternating growth of ultrathin crystalline Si and Ge (c-Si/c-Ge) nano-slates, with Ge-rich layer thickness of 14–19 nm, embedded within a superlattice nanowire structure, with pre-known position and uniform channel diameter. A subsequent selective etching of the Ge-rich segments leaves a chain of ultrafine standing c-Si nanosheets down to $\sim$ $6$ nm thick, without the use of any expensive high-resolution lithography and growth modulation control. A ternary-phase-competition model has been established to explain the underlying formation mechanism of this nanoscale self-oscillating growth dynamics. It is also suggested that these ultrathin nanosheets could help to produce ultrathin fin-channels for advanced electronics, or provide size-specified trapping sites to capture and position hetero nanoparticle for high-precision labelling or light emission.
收稿日期: 2023-04-09
出版日期: 2023-05-29
:
61.46.Km
(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
68.65.Cd
(Superlattices)
81.16.-c
(Methods of micro- and nanofabrication and processing)
81.07.Gf
(Nanowires)
引用本文:
. [J]. 中国物理快报, 2023, 40(6): 66101-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/40/6/066101
或
https://cpl.iphy.ac.cn/CN/Y2023/V40/I6/66101
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2023, Vol. 40 
