Abstract：On the basis of novel properties of ferroelectric conducting domain walls, the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density, high-speed and energy-efficient nanodevices. For in-memory computing, three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently required. Here, a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial BiFeO$_{3}$ thin films. For the logic function, the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source electrodes. For the data storage, the transistor can maintain nonvolatile on/off states after the write/erase operations, providing an innovative approach for the development of the domain wall nanoelectronics.
Seidel J, Martin L W, He Q, Zhan Q, Chu Y H, Rother A, Hawkridge M E, Maksymovych P, Yu P, Gajek M, Balke N, Kalinin S V, Gemming S, Wang F, Catalan G, Scott J F, Spaldin N A, Orenstein J, and Ramesh R 2009 Nat. Mater.8 229
[3]
Seidel J, Maksymovych P, Batra Y, Katan A, Yang S Y, He Q, Baddorf A P, Kalinin S V, Yang C H, Yang J C, Chu Y H, Salje E K H, Wormeester H, Salmeron M, and Ramesh R 2010 Phys. Rev. Lett.105 197603
Maksymovych P, Morozovska A N, Yu P, Eliseev E A, Chu Y H, Ramesh R, Baddorf A P, and Kalinin S V 2012 Nano Lett.12 209
[6]
Yang S Y, Seidel J, Byrnes S J, Shafer P, Yang C H, Rossell M D, Yu P, Chu Y H, Scott J F, Ager J W, Martin L W, and Ramesh R 2010 Nat. Nanotechnol.5 143
Sharma P, Zhang Q, Sando D, Lei C H, Liu Y, Li J, Nagarajan V, and Seidel J 2017 Sci. Adv.3 e1700512
[14]
Chaudhary P, Lu H, Lipatov A, Ahmadi Z, Mcconville J P V, Sokolov A, Shield J E, Sinitskii A, Gregg J M, and Gruverman A 2020 Nano Lett.20 5873
[15]
Yang W D, Tian G, Fan H, Zhao Y, Chen H Y, Zhang L Y, Wang Y D, Fan Z, Hou Z P, Chen D Y, Gao J, Zeng M, Lu X, Qin M, Gao X, and Liu J 2022 Adv. Mater.34 2107711
[16]
Chai X J, Jiang J, Zhang Q H, Hou X, Meng F Q, Wang J, Gu L, Zhang D W, and Jiang A Q 2020 Nat. Commun.11 2811
[17]
Sun J, Li Y, Ou Y, Huang Q, Liao X, Chen Z, Chai X, Zhuang X, Zhang W, Wang C, Jiang J, and Jiang A 2022 Adv. Funct. Mater.32 2207418
Schaab J, Skjærvø S H, Krohns S, Dai X, Holtz M E, Cano A, Lilienblum M, Yan Z, Bourret E, Muller D A, Fiebig M, Selbach S M, and Meier D 2018 Nat. Nanotechnol.13 1028
[24]
Stolichnov I, Iwanowska M, Colla E, Ziegler B, Gaponenko I, Paruch P, Huijben M, Rijnders G, and Setter N 2014 Appl. Phys. Lett.104 132902
2023, Vol. 40 
