摘要Hydrogen ions are implanted into Pb(Zr0.3Ti0.7)O3 thin films at the energy of 40keV with a flux of 5×1014ions/cm2. Pseudo-antiferroelectric behaviour in the implanted thin films is observed, as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves. X-ray diffraction patterns show the film structures before and after H+ implantation both to be perovskite of a tetragonal symmetry. These findings indicate that hydrogen ions exist as stable dopants within the films. It is believed that the dopants change domain-switching behaviour via the boundary charge compensation. Meanwhile, time dependence of leakage current density after time longer than 10s indicates the enhancement of the leakage current nearly in one order for the implanted film, but the current at time shorter than 1s is mostly the same as that of the original film without the ionic implantation. The artificial tailoring of the antiferroelectric behaviour through H+ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.
Abstract：Hydrogen ions are implanted into Pb(Zr0.3Ti0.7)O3 thin films at the energy of 40keV with a flux of 5×1014ions/cm2. Pseudo-antiferroelectric behaviour in the implanted thin films is observed, as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves. X-ray diffraction patterns show the film structures before and after H+ implantation both to be perovskite of a tetragonal symmetry. These findings indicate that hydrogen ions exist as stable dopants within the films. It is believed that the dopants change domain-switching behaviour via the boundary charge compensation. Meanwhile, time dependence of leakage current density after time longer than 10s indicates the enhancement of the leakage current nearly in one order for the implanted film, but the current at time shorter than 1s is mostly the same as that of the original film without the ionic implantation. The artificial tailoring of the antiferroelectric behaviour through H+ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.
[1] Jona F, Shirane G, Mazzi F and Pepinsky R 1957 Phys.Rev. 105 849 [2] Pai N G, Xu B and Cross L E 1998 Integr.Ferroelectr. 22 501 [3] Xu B, Moses P, Pai N G, and Cross L E 1998 Appl.Phys. Lett. 72 593 [4] Woodward D I, Knudsen J and Reaney I M 2005 Phys.Rev. B 72 104110 [5] Cross J S and Tsukada M 2002 Jpn. J. Appl. Phys. I 41 6758 [6] Park Y B, Ruglovsky J L, and Atwater H A 2004 Appl.Phys. Lett. 85 455 [7] Zeng J M and Zheng L R 1999 Phys. Lett. A 251336 [8] Cross J S and Kurihara K 2006 J. Appl. Phys. 99 124105 [9] Zhang Q, Corkovic S, Shaw C P, Huang Z and Whatmore R W2005 Thin Solid Films 488 258 [10] Corker D L, Zhang Q, Whatmore R W and Perrin C 2002 J. Eur. Ceram. Soc. 22 383 [11] Ziegler J F 1990 TRIM94 Software (New York: IBMResearch Division, T. J. Watson Research Center)
2008, Vol. 25 
