Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy
WANG Long-Hai1, DAI Ying2, DENG Zhao2
1School of Electrical and Information Engineering, Wuhan Institute of Technology, Wuhan 4300732State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070
Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy
WANG Long-Hai1, DAI Ying2, DENG Zhao2
1School of Electrical and Information Engineering, Wuhan Institute of Technology, Wuhan 4300732State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070
摘要The etch damage in integrated ferroelectric capacitors side wall fabricated by the typical integrated process (TIP-FeCAP) and the innovated integrated process (IIP-FeCAP) are investigated by piezoresponse force microscopy (PFM). The IIP-FeCAP side wall exhibits fine and clear nanoscale domain images and the same piezoresponse signal as the thin film, and the domains can also be easily switched by an external voltage. In the TIP-FeCAP side wall, owing to the effect of etch damage, the very weak piezoresponse signal and some discrete domains can be observed, and the discrete domains cannot be switched by the applied 9V and -9V dc voltage. The PFM results reflect the etch damage in the integrated ferroelectric capacitors and also suggest that the PFM can be used as an efficacious tools to evaluate the etch damage at nanoscale and spatial variations.
Abstract：The etch damage in integrated ferroelectric capacitors side wall fabricated by the typical integrated process (TIP-FeCAP) and the innovated integrated process (IIP-FeCAP) are investigated by piezoresponse force microscopy (PFM). The IIP-FeCAP side wall exhibits fine and clear nanoscale domain images and the same piezoresponse signal as the thin film, and the domains can also be easily switched by an external voltage. In the TIP-FeCAP side wall, owing to the effect of etch damage, the very weak piezoresponse signal and some discrete domains can be observed, and the discrete domains cannot be switched by the applied 9V and -9V dc voltage. The PFM results reflect the etch damage in the integrated ferroelectric capacitors and also suggest that the PFM can be used as an efficacious tools to evaluate the etch damage at nanoscale and spatial variations.
WANG Long-Hai;DAI Ying;DENG Zhao. Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy[J]. 中国物理快报, 2008, 25(9): 3489-3492.
WANG Long-Hai, DAI Ying, DENG Zhao. Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy. Chin. Phys. Lett., 2008, 25(9): 3489-3492.
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