A Distributed Phase Shifter Using Bi1.5 Zn1.0 Nb1.5 O7 /Ba0.5 Sr0.5 TiO3 Thin Films
LI Ru-Guan, JIANG Shu-Wen** , GAO Li-Bin, LI Yan-Rong
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
Abstract ：We report the demonstration of a monolithic phase shifter employing Bi1.5 Zn1.0 Nb1.5 O7 (BZN)/Ba0.5 Sr0.5 TiO3 (BST) thin films on sapphire substrates. The BST and BZN thin films are successively deposited by radio?frequency magnetron sputtering. A distributed phase shifter with a coplanar?waveguide transmission line periodically loaded with the BZN/BST capacitors is fabricated. The return loss of the circuit is better than - 13 dB from 1 to 12 GHz, and it provides 65° phase shift with an insertion loss of - 4 dB at 12 GHz. The results show that BZN/BST thin films are promising candidate dielectrics for rf/microwave tunable applications.
收稿日期: 2013-02-26
出版日期: 2013-11-21
:
85.50.-n
(Dielectric, ferroelectric, and piezoelectric devices)
84.40.-x
(Radiowave and microwave (including millimeter wave) technology)
77.55.-g
(Dielectric thin films)
[1] Acikel B, Taylor R R, Hansen P J, Speck J S and York R A 2002 IEEE Microwave Wireless Compon. Lett. 12 237 2007 IEEE Trans. Microwave Theory Tech. 55 438 2006 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53 518 2006 IEEE Microwave Wireless Compon. Lett. 16 345 2008 J. Phys. D: Appl. Phys. 41 063001 2003 Appl. Phys. Lett. 83 2411 2006 IEEE Microwave Wireless Compon. Lett. 16 264 2008 Appl. Phys. Lett. 92 182910 2011 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 58 1140 2011 J. Am. Ceram. Soc. 94 2262 2011 Thin Solid Films 520 789 1999 IEEE Trans. Microwave Theory Tech. 47 1705
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
LUO Bing-Cheng;CHEN Chang-Le**;FAN Fei;JIN Ke-Xin. The Photovoltaic Properties of BiFeO3 La0.7 Sr0.3 MnO3 Heterostructures
[8]
CHEN Jun;FAN Guang-Han**;PANG-Wei;ZHENG Shu-Wen
. Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer
[9]
JIA Ze**;WANG Lin-Kai;REN Tian-Ling. Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes
[10]
GONG Yue-Feng;SONG Zhi-Tang;LING Yun;LIU Yan;LI Yi-Jin;FENG Song-Lin. Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials
[11]
GONG Yue-Feng;SONG Zhi-Tang;LING Yun;LIU Yan;LI Yi-Jin. Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling
[12]
LIU Hong-Mei;ZHAO Quan-Liang;CAO Mao-Sheng;YUAN Jie;DUAN Zhong-Xia;QIU Cheng-Jun;. Electromechanical Properties of Microcantilever Actuated by Enhanced Piezoelectric PZT Thick Film
[13]
WANG Long-Hai;DAI Ying;DENG Zhao. Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy
[14]
WEN Xin-Yi;YU Jun;WANG Yun-Bo;ZHOU Wen-Li;GAO Jun-Xiong;CHU Xiao-Hui. Preparation and Characterization of BPO Film as Electrode for Using of FeRAM
[15]
ZHANG Yan-Jun;FEI Jin-Wen;TANG Ting-Ao;JIANG An-Quan. Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage
2013, Vol. 30 
