| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Optical Tunable Moiré Excitons in Twisted Hexagonal GaTe Bilayers |
| Jinsen Han1,2, Kang Lai1,2, Xiaoxiang Yu1,2, Jiahao Chen1,2, Hongli Guo3*, and Jiayu Dai1,2* |
1Department of Physics, National University of Defense Technology, Changsha 410073, China
2Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China
3Department of Physics and Astronomy, California State University, Northridge, CA 91330-8268, USA
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| Cite this article: |
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Jinsen Han, Kang Lai, Xiaoxiang Yu et al 2023 Chin. Phys. Lett. 40 067801 |
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Abstract Optical fine-tunable layer-hybridized Moiré excitons are highly in demand for emerging many-body states in two-dimensional semiconductors. We report naturally confined layer-hybridized bright Moiré excitons with long lifetimes in twisted hexagonal GaTe bilayers, using ab initio many-body perturbation theory and the Bethe–Salpeter equation. Due to the hybridization of electrons and holes between layers, which enhances the brightness of excitons, the twisted bilayer system becomes attractive for optical applications. We find that in both R and H-type stacking Moiré superlattices, more than 200 meV lateral quantum confinements occur on exciton energies, which results in two scenarios: (1) The ground state bright excitons $\mathrm{X}_\mathrm{A}$ are found to be trapped at two high-symmetry points, with opposite electric dipoles in the R-stacking Moiré supercell, forming a honeycomb superlattice of nearest-neighbor dipolar attraction. (2) For H-stacking case, the $\mathrm{X}_\mathrm{A}$ is found to be trapped at only one high-symmetry point exhibiting a triangular superlattice. Our results suggest that twisted h-GaTe bilayer is one of the promising systems for optical fine-tunable excitonic devices and provide an ideal platform for realizing strong correlated Bose–Hubbard physics.
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Received: 05 April 2023
Editors' Suggestion
Published: 11 May 2023
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| PACS: |
78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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42.70.Qs
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(Photonic bandgap materials)
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