| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Contrasting Transport Performance of Electron- and Hole-Doped Epitaxial Graphene for Quantum Resistance Metrology |
| Xinyi Wan1,2,3, Xiaodong Fan1,2,3*, Changwei Zhai4,5, Zhenyu Yang4,5, Lilong Hao1,2,3, Lin Li1,2,3*, Yunfeng Lu4,5, and Changgan Zeng1,2,3* |
1CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
2International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
3Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
4National Institute of Metrology, Beijing 100029, China
5Key Laboratory of Electrical Quantum Standards for State Market Regulation, Beijing 100029, China
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| Cite this article: |
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Xinyi Wan, Xiaodong Fan, Changwei Zhai et al 2023 Chin. Phys. Lett. 40 107201 |
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Abstract Epitaxial graphene grown on silicon carbide (SiC/graphene) is a promising solution for achieving a high-precision quantum Hall resistance standard. Previous research mainly focused on the quantum resistance metrology of n-type SiC/graphene, while a comprehensive understanding of the quantum resistance metrology behavior of graphene with different doping types is lacking. Here, we fabricated both n- and p-type SiC/graphene devices via polymer-assisted molecular adsorption and conducted systematic magneto-transport measurements in a wide parameter space of carrier density and temperature. It is demonstrated that n-type devices show greater potential for development of quantum resistance metrology compared with p-type devices, as evidenced by their higher carrier mobility, lower critical magnetic field for entering quantized Hall plateaus, and higher robustness of the quantum Hall effect against thermal degeneration. These discrepancies can be reasonably attributed to the weaker scattering from molecular dopants for n-type devices, which is further supported by the analyses on the quantum interference effect in multiple devices. These results enrich our understanding of the charged impurity on electronic transport performance of graphene and, more importantly, provide a useful reference for future development of graphene-based quantum resistance metrology.
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Received: 01 August 2023
Published: 13 October 2023
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| PACS: |
06.20.-f
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(Metrology)
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73.43.-f
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(Quantum Hall effects)
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72.80.Vp
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(Electronic transport in graphene)
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72.10.Fk
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(Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))
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