| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer |
| Zhong-Qiu Xing1,2,3, Yong-Jie Zhou4, Yu-Huai Liu1,2,3**, Fang Wang1,2,3** |
1National Joint Research Center for Electron Materials and Systems, Zhengzhou University, Zhengzhou 450001
2International Joint Laboratory of Electron Materials and Systems, Zhengzhou University, Zhengzhou 450001
3School of Information Engineering, Zhengzhou University, Zhengzhou 450001
4School of Physics and Electron Engineering, Xinyang Normal University, Xinyang 464000
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| Cite this article: |
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Zhong-Qiu Xing, Yong-Jie Zhou, Yu-Huai Liu et al 2020 Chin. Phys. Lett. 37 027302 |
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Abstract To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers, an inverse-trapezoidal electron blocking layer is designed. Lasers with three different structural electron blocking layers of rectangular, trapezoidal and inverse-trapezoidal structures are established. The energy band, electron concentration, electron current density, $P$–$I$ and $V$–$I$ characteristics, and the photoelectric conversion efficiency of different structural devices are investigated by simulation. The results show that the optical and electrical properties of the inverse-trapezoidal electron blocking layer laser are better than those of rectangular and trapezoidal structures, owing to the effectively suppressed electron leakage.
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Received: 17 November 2019
Published: 18 January 2020
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| Fund: Supported by the National Natural Science Foundation of China under Grant No. 61176008, the Special Project for Inter-government Collaboration of State Key Research and Development Program under Grant No. 2016YFE0118400, the Key Project of Science and Technology of Henan Province under Grant No. 172102410062, and the National Natural Science Foundation of China–Henan Provincial Joint Fund for Key Project under Grant No. U1604263. |
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