Chin. Phys. Lett.  2019, Vol. 36 Issue (1): 017501    DOI: 10.1088/0256-307X/36/1/017501
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates
Jia-Lin Ma1,2, Hai-Long Wang1,2**, Xing-Min Zhang3, Shuai Yan3, Wen-Sheng Yan4, Jian-Hua Zhao1,2,5
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
3Shanghai Synchrotron Radiation Facility, Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204
4National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029
5CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190
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Jia-Lin Ma, Hai-Long Wang, Xing-Min Zhang et al  2019 Chin. Phys. Lett. 36 017501
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Abstract Single-phase Ni$_{0.92}$Mn$_{1.08}$As films with strained $C_{\rm 1b}$ symmetry are grown on GaAs (001) substrates. In addition, a preferred epitaxial configuration of (110)-orientated Ni$_{0.92}$Mn$_{1.08}$As on (001)-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be $\sim$$370^\circ\!$C. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.
Received: 26 September 2018      Published: 25 December 2018
PACS:  75.50.Cc (Other ferromagnetic metals and alloys)  
  75.70.Ak (Magnetic properties of monolayers and thin films)  
  81.05.Bx (Metals, semimetals, and alloys)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
Fund: Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405701, the National Natural Science Foundation of China under Grant Nos U1632264 and 11706374, and the Key Research Project of Frontier Science of Chinese Academy of Science under Grant No QYZDY-SSW-JSC015.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/36/1/017501       OR      https://cpl.iphy.ac.cn/Y2019/V36/I1/017501
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Jia-Lin Ma
Hai-Long Wang
Xing-Min Zhang
Shuai Yan
Wen-Sheng Yan
Jian-Hua Zhao
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