Chin. Phys. Lett.  2018, Vol. 35 Issue (5): 056101    DOI: 10.1088/0256-307X/35/5/056101
Metastable Electron Traps in Modified Silicon-on-Insulator Wafer
Li-Hua Dai1,2**, Da-Wei Bi1, Zheng-Xuan Zhang1, Xin Xie1,2, Zhi-Yuan Hu1, Hui-Xiang Huang3, Shi-Chang Zou1
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of Chinese Academy of Sciences, Beijing 100049
3Information Engineering College, Jimei University, Fujian 361021
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Li-Hua Dai, Da-Wei Bi, Zheng-Xuan Zhang et al  2018 Chin. Phys. Lett. 35 056101
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Abstract We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator (SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.
Received: 23 January 2018      Published: 30 April 2018
PACS:  61.80.Ed (γ-ray effects)  
  61.82.Fk (Semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Supported by the National Natural Science Foundation of China under Grant No 61504047, and the Fujian Provincial Department of Science and Technology under Grant No 2016J05159.
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Li-Hua Dai
Da-Wei Bi
Zheng-Xuan Zhang
Xin Xie
Zhi-Yuan Hu
Hui-Xiang Huang
Shi-Chang Zou
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