| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Ohmic Contact at Al/TiO$_{2}$/n-Ge Interface with TiO$_{2}$ Deposited at Extremely Low Temperature |
| Yi Zhang, Gen-Quan Han**, Yan Liu, Huan Liu, Jin-Cheng Zhang, Yue Hao |
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
|
|
| Cite this article: |
|
Yi Zhang, Gen-Quan Han, Yan Liu et al 2018 Chin. Phys. Lett. 35 028501 |
|
|
|
|
Abstract TiO$_{2}$ deposited at extremely low temperature of 120$^\circ\!$C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeO$_{x}$ to reduce the tunneling resistance. Compared with TiO$_{2}$ deposited at higher temperature of 250$^\circ\!$C, there are more oxygen vacancies in lower-temperature-deposited TiO$_{2}$, which will dope TiO$_{2}$ contributing to the lower tunneling resistance. Al/TiO$_{2}$/n-Ge metal-insulator-semiconductor diodes with 2 nm 120$^\circ\!$C deposited TiO$_{2}$ achieves 2496 times of current density at $-$0.1 V compared with the device without the TiO$_{2}$ interface layer case, and is 8.85 times larger than that with 250$^\circ\!$C deposited TiO$_{2}$. Thus inserting extremely low temperature deposited TiO$_{2}$ to depin the Fermi level for n-Ge may be a better choice.
|
|
|
Received: 12 October 2017
Published: 23 January 2018
|
|
| PACS: |
85.30.Hi
|
(Surface barrier, boundary, and point contact devices)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
85.30.Kk
|
(Junction diodes)
|
| |
85.30.Tv
|
(Field effect devices)
|
|
|
| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61534004, 61604112 and 61622405. |
|
|
|
| [1] | Xie R, Phung T H, He W, Yu M and Zhu C 2009 IEEE Trans. Electron Devices 56 1330 | | [2] | Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta P, Wong H and Saraswat K C 2011 IEEE Trans. Electron Devices 58 59 | | [3] | Dimoulas A, Tsipas P, Sotiropoulos A and Evangelou E 2006 Appl. Phys. Lett. 89 252110 | | [4] | Nishimura T, Kita K and Toriumi A 2007 Appl. Phys. Lett. 91 123123 | | [5] | Zhou Y, Ogawa M, Han X and Wang K 2008 Appl. Phys. Lett. 93 202105 | | [6] | Nishimura T, Kita K and Toriumi A 2008 Appl. Phys. Express 1 051406 | | [7] | Connelly D, Faulkner C, Clifton P and Grupp D 2006 Appl. Phys. Lett. 88 012105 | | [8] | Manik P, Mishra R, Kishore V, Ray P, Nainani A, Huang Yi, Abraham M, Ganguly U and Lodha S 2012 Appl. Phys. Lett. 101 182105 | | [9] | Lin J, Roy A, Nainani A, Sun Y and Saraswat K C 2011 Appl. Phys. Lett. 98 092113 | | [10] | Kim G, Kim J, Kim S, Jo J, Shin C, Park J, Saraswat K C and Yu H 2014 IEEE Electron. Devices Lett. 35 1076 | | [11] | Biswas D, Biswas J, Ghosh S, Wood B and Lodha S 2017 Appl. Phys. Lett. 110 052104 | | [12] | Wang G, Wang H, Ling Y, Tang Y, Yang X, Fitzmorris R, Wang C, Zhang J and Li Y 2011 Nano Lett. 11 3026 | | [13] | Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J and McIntyre P 2015 ACS Appl. Mater. Interfaces 7 20499 | | [14] | Kita K, Wang S K, Yoshida M, Lee C H, Nagashio K, Nishimura T, Toriumi A 2009 Electron Devices Meeting, IEEE International (Baltimore, MD, USA 7–9 December 2009) p 693 | | [15] | Aarik J, Aidla A, Kiisler A, Uustare T and Sammelselg V 1997 Thin Solid Films 305 270 | | [16] | Kim G, Kim S, Kim S, Park J, Seo Y, Cho B, Shin C, Shim J and Yu H 2016 ACS Appl. Mater. Interfaces 8 35419 | | [17] | Gupta S, Manik P, Mishra R, Nainani A, Abraham M and Lodha S 2013 J. Appl. Phys. 113 234505 | | [18] | Strobel A, Schnabel H, Reinhold U, Rauer S and Neidhardt A 2016 J. Vac. Sci. Technol. A 34 01A118 | | [19] | Puurunen R L, Sajavaara T, Santala E, Miikkulainen V, Saukkonen, Laitinen M and Leskelä M 2011 J. Nanosci. Nanotechnol. 11 8101 | | [20] | Figgemeiera E, Kylberga W, Constablea E, Scarisoreanub M, Alexandrescub R, Morjanb I, Birjegab R, Popovicib E, Fleacab C, Gavrila F L and Prodan G 2007 Appl. Surf. Sci. 254 1037 | | [21] | Nasim F, Ali A, Bhatti A S and Naseem S 2011 J. Appl. Phys. 110 114517 | | [22] | Hu J, Nainani A, Sun Y, Saraswat K C and Wong H 2011 Appl. Phys. Lett. 99 252104 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
