Chin. Phys. Lett.  2015, Vol. 32 Issue (09): 097102    DOI: 10.1088/0256-307X/32/9/097102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Structural and Transport Properties of the Weyl Semimetal NbAs at High Pressure
ZHANG Jun1, LIU Feng-Liang1,2, DONG Jin-Kui1**, XU Yang1, LI Na-Na2, YANG Wen-Ge2**, LI Shi-Yan1,3**
1State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433
2Center for High Pressure Science and Technology Advanced Research, Shanghai 201203
3Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433
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ZHANG Jun, LIU Feng-Liang, DONG Jin-Kui et al  2015 Chin. Phys. Lett. 32 097102
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Abstract We perform a series of high-pressure synchrotron x-ray diffraction (XRD) and resistance measurements on the Weyl semimetal NbAs. The crystal structure remains stable up to 26 GPa according to the powder XRD data. The resistance of NbAs single crystal increases monotonically with pressure at low temperature. Up to 20 GPa, no superconducting transition is observed down to 0.3 K. These results show that the Weyl semimetal phase is robust in NbAs, and applying pressure may not be a good way to obtain a topological superconductor from Weyl semimetal NbAs.
Received: 04 June 2015      Published: 02 October 2015
PACS:  71.55.Ak (Metals, semimetals, and alloys)  
  61.50.Ks (Crystallographic aspects of phase transformations; pressure effects)  
  74.62.Fj (Effects of pressure)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/9/097102       OR      https://cpl.iphy.ac.cn/Y2015/V32/I09/097102
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ZHANG Jun
LIU Feng-Liang
DONG Jin-Kui
XU Yang
LI Na-Na
YANG Wen-Ge
LI Shi-Yan
[1] Qi X L and Zhang S C 2011 Rev. Mod. Phys. 83 1057
[2] Wan X G, Turner A M, Vishwanath A and Savrasov S Y 2011 Phys. Rev. B 83 205101
[3] Xu G, Weng H M, Wang Z J, Dai X and Fang Z 2011 Phys. Rev. Lett. 107 186806
[4] Young S M, Zaheer S, Teo J C Y, Kane C L, Mele E J and Rappe A M 2012 Phys. Rev. Lett. 108 140405
[5] Wang Z, Sun Y, Chen X, Franchini C, Xu G et al 2012 Phys. Rev. B 85 195320
[6] Wang Z, Weng H, Wu Q, Dai X and Fang Z 2013 Phys. Rev. B 88 125427
[7] Hosur P and Qi X L 2013 Comptes Rendus Physique 14 857
[8] Turner A M and Vishwanath A 2013 arXiv:1301.0330v1 [cond-mat.str-el]
[9] Vafek O and Vishwanath A 2014 Annu. Rev. Condens. Matter Phys. 5 83
[10] Weng H M, Fang C, Fang Z, Bernevig B A and Dai X 2015 Phys. Rev. X 5 011029
[11] Huang S M, Xu S Y, Belopolski I, Lee C C, Chang G Q et al 2015 Nat. Commun. 6 7373
[12] Liu Z K, Zhou B, Zhang Y, Wang Z J, Weng H M et al 2014 Science 343 864
[13] Liu Z K, Jiang J, Zhou B, Wang Z J, Zhang Y et al 2014 Nat. Mater. 13 667
[14] Xu S Y, Liu C, Kushwaha S K, Sankar R, Krizan J W et al 2015 Science 347 294
[15] Neupane M, Xu S Y, Sankar R, Alidoust N, Bian G et al 2014 Nat. Commun. 5 3786
[16] Borisenko S, Gibson Q, Evtushinsky D, Zabolotnyy V, Büchner B and Cava R J 2014 Phys. Rev. Lett. 113 027603
[17] Jeon S, Zhou B B, Gyenis A, Feldman B E, Kimchi I et al 2014 Nat. Mater. 13 851
[18] He L P, Hong X C, Dong J K, Pan J, Zhang Z et al 2014 Phys. Rev. Lett. 113 246402
[19] Xu S Y, Belopolski I, Alidoust N, Neupane M, Zhang C L et al 2015 arXiv:1502.03807
[20] Lv B Q, Weng H M, Fu B B, Wang X P, Miao H et al 2015 Phys. Rev. X 5 031013
[21] Lv B Q, Xu N, Weng H M, Ma J Z, Richard P et al 2015 arXiv:1503.09188v2[cond-mat.mtrl-sci]
[22] Xu S Y, Alidoust N, Belopolski I, Zhang C L, Bian G et al 2015 arXiv:1504.01350
[23] Zhang C, Yuan Z, Xu S, Lin Z, Tong B et al 2015 arXiv:1502.00251v1[cond-mat.mtrl-sci]
[24] Shekhar C, Nayak A K, Sun Y, Schmidt M, Nicklas M et al 2015 Nat. Phys. 11 645
[25] Ghimire N J, Luo Y K, Neupane M, Williams D J, Bauer E D and Ronning F 2015 J. Phys.: Condens. Matter 27 152201
[26] Huang X, Zhao L, Long Y, Wang P, Chen D et al 2015 arXiv:1503.01304v1[cond-mat.mtrl-sci]
[27] Hosur P, Dai X, Fang Z and Qi X L 2014 Phys. Rev. B 90 045130
[28] Hor Y S, Williams A J, Checkelsky J G, Roushan P, Seo J et al 2010 Phys. Rev. Lett. 104 057001
[29] Das P, Suzuki Y, Tachiki M and Kadowaki K 2011 Phys. Rev. B 83 220513
[30] Sasaki S, Kriener M, Segawa K, Yada K, Tanaka Y et al 2011 Phys. Rev. Lett. 107 217001
[31] Sasaki S, Segawa K and Ando Y 2014 Phys. Rev. B 90 184516
[32] Zhu J, Zhang J L, Kong P P, Zhang S J, Yu X H et al 2013 Sci. Rep. 3 2016
[33] Kong P P, Sun F, Xing L Y, Zhu J, Zhang S J et al 2014 Sci. Rep. 4 6679
[34] Zhang J L, Zhang S J, Weng H M, Zhang W, Yang L X et al 2011 Proc. Natl. Acad. Sci. USA 108 24
[35] Zhang C, Sun L, Chen Z, Zhou X, Wu Q et al 2011 Phys. Rev. B 83 140504(R)
[36] Kirshenbaum K, Syers P S, Hope A P, Butch N P, Jeffries J R et al 2013 Phys. Rev. Lett. 111 087001
[37] Matsubayashi K, Terai T, Zhou J S and Uwatoko Y 2014 Phys. Rev. B 90 125126
[38] He L P, Jia Y T, Zhang S J, Hong X C, Jin C Q and Li S Y 2015 arXiv:1502.02509v1[cond-mat.supr-con]
[39] Wu W, Zhang X, Yin Z, Zheng P, Wang N and Luo J 2010 Sci. Chin. Phys. Mech. Astron. 53 7
[40] Yan X, Tan D, Ren X, Yang W, He D and Mao H 2015 Appl. Phys. Lett. 106 171902
[41] Boller H and Perthe E 1963 Acta Crystallogr. 16 1095
[42] Saparov B, Mitchell J E and Sefat A S 2012 Supercond. Sci. Technol. 25 084016
[43] Zhang S, Wu Q, Schoop L, Ali M N, Shi Y G et al 2015 Phys. Rev. B 91 165133
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