Effects of Si <em>δ</em>-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

doi:10.1088/0256-307X/32/9/097101

Chin. Phys. Lett.

2015, Vol. 32

Issue (09): 097101 DOI: 10.1088/0256-307X/32/9/097101

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

ZHOU Shu-Xing¹, QI Ming^1**, AI Li-Kun¹, XU An-Huai¹, WANG Li-Dan², DING Peng², JIN Zhi²

¹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
²Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029

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ZHOU Shu-Xing, QI Ming, AI Li-Kun et al 2015 Chin. Phys. Lett. 32 097101

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Abstract The InGaAs/InAlAs/InP high electron mobility transistor (HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy. Effects of Si δ-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si δ-doping concentration (N_d) is about 5.0×10¹² cm^?2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy. An InGaAs/InAlAs/InP HEMT device with a gate length of 100 nm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits f_T=249 GHz and f_max>400 GHz.

Received: 17 April 2015 Published: 02 October 2015

PACS:	71.20.Nr	(Semiconductor compounds)
	71.55.Eq	(III-V semiconductors)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	2.10.Fk
	73.40.-c	(Electronic transport in interface structures)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/9/097101 OR https://cpl.iphy.ac.cn/Y2015/V32/I09/097101

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	ZHOU Shu-Xing
	QI Ming
	AI Li-Kun
	XU An-Huai
	WANG Li-Dan
	DING Peng
	JIN Zhi

[1] Mei X et al 2015 IEEE Electron Device Lett. 36 327
[2] Leong K M K H et al 2015 IEEE Microwave Wireless Compon. Lett. 25 397
[3] Li H O et al 2011 Chin. Phys. B 20 068502
[4] Huang J et al 2010 Chin. Phys. Lett. 27 118502
[5] Tessmann A et al 2014 IEEE Int. Microw. Symp. Dig. p 1
[6] Deal W R et al 2014 IEEE Int. Microw. Symp. Dig. p 1
[7] Radisic V et al 2012 IEEE Trans. Microwave Theory Tech. 60 724
[8] Watanabe K and Yokoyama H 2001 J. Appl. Phys. 89 1696
[9] Murata K et al 2004 IEEE J. Solid-State Circuits 39 207
[10] Shinohara K et al 2004 IEEE Electron Device Lett. 25 241
[11] Skuras E et al 2001 J. Vac. Sci. Technol. B 19 1524
[12] Pan N et al 1991 Appl. Phys. Lett. 59 458
[13] Brown A S et al 1991 Appl. Phys. Lett. 59 3610
[14] Sagisaka H et al 2006 J. Vac. Sci. Technol. B 24 2668
[15] Watanabe I et al 2003 J. Cryst. Growth 251 90
[16] Zhao L et al 2013 Mater. Lett. 106 222
[17] Watanabe I et al 2001 J. Vac. Sci. Technol. B 19 1515
[18] Sakaki H et al 1987 Appl. Phys. Lett. 51 1934
[19] Ramvall P et al 1998 J. Appl. Phys. 84 2112

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