| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel |
| JIA Ze1**, XU Jian-Long2, WU Xiao1, ZHANG Ming-Ming2, LIOU Juin-J.3 |
1School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054
2Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084
3Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando 32816, USA
|
|
| Cite this article: |
|
JIA Ze, XU Jian-Long, WU Xiao et al 2015 Chin. Phys. Lett. 32 028501 |
|
|
|
|
Abstract We report a back-gated metal-oxide-ferroelectric-metal (MOFM) field-effect transistor (FET) with lead zirconate titanate (PZT) material, in which an Al doped zinc oxide (AZO) channel layer with an optimized doping concentration of 1% is applied to reduce the channel resistance of the channel layer, thus guaranteeing a large enough load capacity of the transistor. The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor, indicating that the remnant polarization is almost 40 μC/cm2 and the polarization is saturated at 20 V. The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT. The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET, which also show a drain current switching ratio up to about 100 times.
|
|
|
Published: 20 January 2015
|
|
|
|
|
|
|
|
[1] Mathews S, Ramesh R, Venkatesan T and Benedetto J 1997 Science 276 238
[2] Naber R C G, Tanase C, Blom P W M, Gelinck G H, Marsman A W, Touwslager F J, Setayesh S and Leeuw D M D 2005 Nat. Mater. 4 243
[3] Setter N et al 2006 J. Appl. Phys. 100 051606
[4] Hoffman J, Reiner J W, Walker F J, Han J P, Ahn C H and Ma T P 2010 Adv. Mater. 22 2957
[5] Hong W K, Sohn J I, Cha S N, Kim J M, Park J B, Choi S S, Coles H J and Welland M E 2013 Appl. Phys. Lett. 102 053504
[6] Sohn J I, Choi S S, Morris S M, Bendall J S, Coles H J, Hong W K, Jo G, Lee T and Welland M E 2010 Nano Lett. 10 4316
[7] Liao L et al 2009 ACS Nano 3 700
[8] Zhu H and Chu D P 2013 Chin. Phys. Lett. 30 127702
[9] Shichi Y, Tanimoto S, Goto T Kuroiwa K and Tarui Y 1994 Jpn. J. Appl. Phys. 33 5172
[10] Kodama K, Takahashi M, Richinschi D, Lerescu A I, Noda M and Okuyama M 2002 Jpn. J. Appl. Phys. 41 2639
[11] Lee B Y, Minami T, Kanashima T and Okuyama M 2006 Jpn. J. Appl. Phys. 45 8608
[12] Zeng Y, Ni G X, Toh C T, Zeng M G, Chen S T, Yao K and Ozyilmaz B 2009 Appl. Phys. Lett. 94 163505
[13] Nonnenmann S S, Islam M A, Beatty B R, Gallo E M, McGuckin T and Spanier J E 2012 Adv. Funct. Mater. 22 4957
[14] Hsieh H H and Wu C C 2007 Appl. Phys. Lett. 91 013502
[15] Ryu Y, Lee T S, Lubguban J A, White H W, Kim B J, Park Y S and Youn C J 2006 Appl. Phys. Lett. 88 241108
[16] Jiang W, Gao H and Xu L L 2012 Chin. Phys. Lett. 29 037102
[17] Gao H X, Hu R and Yang Y T 2012 Chin. Phys. Lett. 29 017305
[18] Yi M D, Xie L H, Liu Y Y, Dai Y F and Huang J Y 2011 Chin. Phys. Lett. 28 017302
[19] Kim I D, Choi Y W and Tuller H L 2005 Appl. Phys. Lett. 87 043509
[20] Xu J L, Jia Z, Zhang N W and Ren T L 2012 J. Appl. Phys. 111 074101
[21] Zhang N W, Jia Z, Zhang M M and Ren T L 2011 Mater. Res. Soc. Symp. Proc. (San Francisco, California 25–29 April 2011) 1368 mrss11-1368
[22] Lu H et al 2012 Adv. Mater. 24 1209
[23] Zhang M M, Jia Z and Ren T L 2009 Solid-State Electron. 53 473
[24] Zhang M M, Jia Z, Wang L K and Ren T L 2010 Ferroelectrics 406 97
[25] Jia Z, Zhang M M and Ren T L 2011 Ferroelectrics 421 92
[26] Kuo S Y, Chen W C, Lai F I, Cheng C P, Kuo H C and Wang S C 2006 J. Cryst. Growth 287 78
[27] Mass J, Bhattacharya P and Katiyar R S 2003 Mater. Sci. Eng. B 103 9
[28] Scott J F, Watanabe K, Hartmann A J and Lamb R N 1999 Ferroelectrics 225 83
[29] Dixit A V, Rajopadhye N R and Bhoraskar S V 1986 J. Mater. Sci. 21 2798
[30] Matsubara K, Fons P, Iwata K, Yamada A, Sakurai K, Tampo H and Niki S 2003 Thin Solid Films 431 369
[31] Huang H Q, Sun J, Liu F J, Zhao J W, Hu Z F, Li Z J, Zhang X Q and Wang Y S 2011 Chin. Phys. Lett. 28 128502
[32] Behrends A, Wagner A, Al-Suleiman M A M, Lugauer H J, Strassburg M, Walter R, Weimar A, Waag A and Bakin A 2012 Phys. Status Solidi A 209 708
[33] Yao I C, Lee D Y, Tseng T Y and Lin P 2012 Nanotechnology 23 145201
[34] Zhang Z, Wang S J, Yu T and Wu T 2007 J. Phys. Chem. C 111 17500
[35] Xing Y J et al 2003 Appl. Phys. Lett. 83 1689 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
