| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
The Effects of Polarization on the Current Transport Mechanisms for UV-LEDs |
| MA Ji-Zhao, DONG Ke-Xiu, CHEN Dun-Jun**, LU Hai, CHEN Peng, ZHANG Rong, ZHENG You-Dou |
Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructure, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093
|
|
| Cite this article: |
|
MA Ji-Zhao, DONG Ke-Xiu, CHEN Dun-Jun et al 2013 Chin. Phys. Lett. 30 068501 |
|
|
|
|
Abstract The effects of a polarization field on the current transport mechanisms in ultraviolet light emitting diodes (UV-LEDs) are studied by analyzing forward current-voltage (I–V) characteristics based on the experimental data and theoretical simulation. The results indicate that polarization electric field suppresses the diffusion current and meanwhile enhances the tunneling current in the metal-face UV LEDs under forward bias. The presence of a large polarization field in the deep UV-LEDs is responsible for the current transport mechanism dominated by the tunneling process at a moderate forward bias.
|
|
|
Received: 05 February 2013
Published: 31 May 2013
|
|
| PACS: |
85.60.Jb
|
(Light-emitting devices)
|
| |
73.50.-h
|
(Electronic transport phenomena in thin films)
|
| |
71.20.Nr
|
(Semiconductor compounds)
|
| |
71.55.Eq
|
(III-V semiconductors)
|
|
|
|
|
|
[1] Jain R, Sun W, Yang J, Shatalov M and Hu X 2008 Appl. Phys. Lett. 93 051113
[2] Taniyasu Y, Kasu M and Makimoto T 2006 Nature 441 325
[3] Hu X, Deng J, Zhang J P et al 2006 Phys. Status Solidi A 203 1815
[4] Zhang J P, Khan M A, Sun W H et al 2002 Appl. Phys. Lett. 81 4392
[5] Shakya J, Knabe K, Kim K H, Li J et al 2005 Appl. Phys. Lett. 86 091107
[6] Masui H, Asamizu H, Melo T et al 2009 J. Phys. D: Appl. Phys. 42 135106
[7] Shur M S and Gaska R 2010 IEEE Trans. Electron Devices 57 12
[8] Deng J, Bilenko Y, Lunev A et al 2007 Jpn. J. Appl. Phys. 46 263
[9] Yang L, Ma X H, Feng Q, Hao Y 2008 Chin. Phys. B 17 2696
[10] Lee S W, Oh D C, Goto H, Ha J S, Lee H J et al 2006 Appl. Phys. Lett. 89 132117
[11] Cao X A, Stokes E B, Sandvik P M et al 2002 IEEE Electron Device Lett. 23 535
[12] Mu S, Yu T J, Huang L B et al 2007 Chin. Phys. Lett. 24 3245
[13] Witte H, Rohrbeck A et al 2011 Phys. Status Solidi A 208 1597
[14] Perlin P, Osinski M, Eliseev P G et al 1996 Appl. Phys. Lett. 69 1680
[15] Yan Q R, Zhang Y, Yan Q A et al 2012 Acta Phys. Sin. 61 036103 (in Chinese)
[16] Bernardini F, Fiorentini V and Vanderbilt D 1997 Phys. Rev. B 56 55
[17] Yu E T, Sullivan G J, Asbeck P M et al 1997 Appl. Phys. Lett. 71 2794
[18] Cao X A, Teetsov J M, D'Evelyn M P et al 2004 Appl. Phys. Lett. 85 7
[19] Bochkareva N I, Voronenkov V V, Gorbunov R I et al 2010 Appl. Phys. Lett. 96 133502
[20] Yeh P C, Hwa M C, Yu J W et al 2009 Phys. Status Solidi C 6 S538
[21] Ganichev S D, Ziemann E, Prettl W et al 2000 Phys. Rev. B 61 10361
[22] Shan Q F, Meyaard D S, Dai Q et al 2011 Appl. Phys. Lett. 99 253506
[23] Baber N, Scheffler H, Ostmann A et al 1992 Phys. Rev. B 45 4043 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
