| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Asymmetric Underlap in Scaled Floating Body Cell Memories |
| WU Qing-Qing1,2, CHEN Jing1**, LUO Jie-Xin1, LU Kai1,2, CHAI Zhan1, YU Tao1, WANG Xi1 |
1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of the Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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WU Qing-Qing, CHEN Jing, LUO Jie-Xin et al 2013 Chin. Phys. Lett. 30 068502 |
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Abstract The asymmetric underlap device for a floating body cell is proposed without any extra process or photomask during fabrication. The electric field in the gate-drain underlap region is quietly relaxed. It is found that memory operation would fail in bipolar-based floating body cells because band-to-band tunneling significantly alters the body potential. Measurements show the proposed structure could indeed suppress the undesirable band-to-band tunneling greatly so that the bistable state via the parasitic bipolar junction transistor is ensured in scaled floating body cells. The parasitic capacitances in both word line and bit line are also reduced.
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Received: 13 March 2013
Published: 31 May 2013
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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