| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy |
| WAN Xiao-Jia1, WANG Xiao-Liang1,2,3**, XIAO Hong-Ling1, WANG Cui-Mei1, FENG Chun1, DENG Qing-Wen1, QU Shen-Qi1, ZHANG Jing-Wen3, HOU Xun3, CAI Shu-Jun4, FENG Zhi-Hong4 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083
3School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049
4National Key Lab of ASIC, Shijiazhuang 050051
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| Cite this article: |
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WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling et al 2013 Chin. Phys. Lett. 30 057101 |
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Abstract The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ～0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.
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Received: 14 January 2013
Published: 31 May 2013
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| PACS: |
71.55.Eq
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(III-V semiconductors)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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