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Preparation of N-Qubit GHZ State with a Hybrid Quantum System Based on Nitrogen-Vacancy Centers
ZHAO Yu-Jing, FANG Xi-Ming, ZHOU Fang, SONG Ke-Hui
Chin. Phys. Lett. 2013, 30 (5):
050304
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DOI: 10.1088/0256-307X/30/5/050304
We propose a novel scheme for generating N-qubit GHZ entangled state with a hybrid quantum system, which consists of N nitrogen-vacancy centers, N transmission line resonators, a current-biased Josephson junction superconducting qubit, and three kinds of interaction Hamiltonians. The proposal requires no adjustment of the qubit level spacings during the entire operation. Moreover, it is shown that the operation time is independent of the number of qubits. The present proposal is quite useful, and is a promising step to realize the large-sized quantum networks for quantum information processing and quantum computation.
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Re-examination of Finite-Size Effects in Isobaric Yield Ratios Using a Statistical Abrasion-Ablation Model
MA Chun-Wang, WANG Shan-Shan, WEI Hui-Ling, MA Yu-Gang
Chin. Phys. Lett. 2013, 30 (5):
052501
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DOI: 10.1088/0256-307X/30/5/052501
The "finite-size" effects in the isobaric yield ratio (IYR), which are shown in the standard grand-canonical and canonical statistical ensembles (SGC/CSE) method, are claimed to prevent the actual values of physical parameters from being obtained. The conclusion of SGC/CSE may be questionable for neutron-rich nucleus-induced reactions. To investigate whether the IYR has finite-size effects, we re-examine the IYR for the mirror nuclei [IYR(m)] using a modified statistical abrasion-ablation (SAA) model. It is found that when the projectile is not so neutron-rich, the IYR(m) depends on the isospin of the projectile, but size dependence can not be excluded. In reactions induced by the very neutron-rich projectiles, contrary results to those of the SGC/CSE models are obtained, i.e., the dependence of the IYR(m) on the size and the isospin of the projectile is weakened and disappears in both the SAA and experimental results.
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Tuning and Cold Test of a Four-Vane RFQ with Ramped Inter-Vane Voltage for the Compact Pulsed Hadron Source
XING Qing-Zi, DU Lei, ZHENG Shu-Xin, GUAN Xia-Ling, LI Jian, CAI Jin-Chi, GONG Cun-Kui, WANG Xue-Wu, TANG Chuan-Xiang, James Billen, James Stovall, Lloyd Young
Chin. Phys. Lett. 2013, 30 (5):
052901
.
DOI: 10.1088/0256-307X/30/5/052901
A four-vane radio-frequency quadrupole (RFQ) accelerator is under construction for the Compact Pulsed Hadron Source (CPHS) project at Tsinghua University. The 3 m-long RFQ will accelerate a 50 keV proton beam from the ECR source to 3 MeV, and deliver it to the downstream drift tube linac (DTL) with a peak current of 50 mA, pulse length of 0.5 ms and beam duty factor of 2.5%. The inter-vane voltage is designed to increase with the longitudinal position to produce a short RFQ. Coupling plates are therefore not necessary. The cavity cross section and vane-tip geometry are tailored as a function of the longitudinal position, while limiting the peak surface electric field to 1.8 Kilpatrick. The RFQ is designed, manufactured, and installed at Tsinghua University. We also present the tuning and cold test results of the RFQ accelerator. After final tuning, the relative error of the quadrupole field is within 2%, and the admixture of the two dipole modes are less than 2% of the quadrupole mode.
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A Multiple Phase-Shifted Distributed Feedback (DFB) Laser Fabricated by Nanoimprint Lithography
ZUO Qiang, ZHAO Jian-Yi, CHEN Xin, WANG Zhi-Hao, SUN Tang-You, ZHOU Ning, ZHAO Yan-Li, XU Zhi-Mou, LIU Wen
Chin. Phys. Lett. 2013, 30 (5):
054205
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DOI: 10.1088/0256-307X/30/5/054205
Multiple phase-shifted (MPS) diffraction grating is an effective way proposed to overcome the spatial hole burning (SHB) effect in a distributed feedback (DFB) laser. We present two symmetric λ/8 phase-shifted DFB lasers by using nanoimprint lithography (NIL). The threshold current of a typical laser is less than 15 mA. The side mode suppression ratio (SMSR) is still above 42 dB even at 100 mA current injection. To show the versatility of NIL, eight different wavelength MPS-DFB lasers on this single chip are also demonstrated. Our results prove that NIL is a promising tool for fabricating high performance complex grating DFB lasers.
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Improvement of the Focusing Resolution of Photonic Crystal Negative Refraction Imaging with a Hollow Component Structure
CHEN Shou-Xiang, YANG Xiu-Lun, MENG Xiang-Feng, DONG Guo-Yan, WANG Yu-Rong, WANG Lin-Hui, HUANG Zhe
Chin. Phys. Lett. 2013, 30 (5):
054206
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DOI: 10.1088/0256-307X/30/5/054206
The negative refraction and imaging effects in photonic crystals can be used to solve diffraction limit problem in near-field optics. Improving transmission efficiency and image resolution is a critical work for negative refraction imaging. We theoretically investigate the band structures, equi-frequency surfaces, electromagnetic wave propagation, and the image intensity distributions in a two-dimensional hexagonal photonic crystal consisting of hollow components. It is found that, in contrast to a hexagonal photonic crystal consisting of solid dielectric cylinders of the same radius, photonic crystals with hollow components can be used to optimize the all-angle negative refraction. Numerical simulations show that the transmission efficiency and resolution of image can be enhanced by changing the radii of the hollow air rods.
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Sound Velocity in Water and Ice up to 4.2 GPa and 500 K on Multi-Anvil Apparatus
WANG Zhi-Gang, LIU Yong-Gang, ZHOU Wen-Ge, SONG Wei, BI Yan, LIU Lei, XIE Hong-Sen
Chin. Phys. Lett. 2013, 30 (5):
054302
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DOI: 10.1088/0256-307X/30/5/054302
A new assembly for ultrasonic measurements of water and ice on multi-anvil apparatus has been designed, and the ultrasonic compressional wave velocities in water and ice up to 4.2 GPa and 500 K are achieved. The pressure of the sample is calibrated by the melting curve of ice VII and the transformation pressure of liquid to solid at ambient temperature. The continuous changing process of the sound velocity transforming from water into ice at high pressure is achieved, and the experimental results of sound velocities at high pressure at room temperature on the melting curve of water are consistent with the previous works by Brillouin scattering. It is believed that our new method of ultrasonic measurements of water is reliable, and worth being used for studying more liquids at high pressure.
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Embedded Atom Method-Based Geometry Optimization Aspects of Body-Centered Cubic Metals
M. Güler, E. Güler
Chin. Phys. Lett. 2013, 30 (5):
056201
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DOI: 10.1088/0256-307X/30/5/056201
We present embedded atom method-based geometry optimization calculations for Fe, Cr, Mo, Nb, Ta, V and W body-centered cubic metals with Finnis–Sinclair potentials. After the optimization, we determine their typical elastic constants, bulk modulus, shear modulus, Young's modulus, Poisson's ratios, elastic wave velocities and cohesive energies. Additionally, we perform a benchmark between the experiments and the available density functional theory results. In general, our results show a good consistency with previous findings on the elastic and cohesive energy properties of the considered metals.
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The Formation and Characterization of GaN Hexagonal Pyramids
ZHANG Shi-Ying, XIU Xiang-Qian, LIN Zeng-Qin, HUA Xue-Mei, XIE Zi-Li, ZHANG Rong, ZHENG You-Dou
Chin. Phys. Lett. 2013, 30 (5):
056801
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DOI: 10.1088/0256-307X/30/5/056801
GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {1011} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.
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Visualization of a Maze-Like Reconstruction of Graphene on a Copper Surface at the Atomic Scale
XIE Nan, GONG Hui-Qi, ZHOU Zhi, GUO Xiao-Dong, YAN Shi-Chao, SUN Qian, XING Sirui, WU Wei, PEI Shin-shem, BAO Jiming, SHAN Xin-Yan, GUO Yang, LU Xing-Hua
Chin. Phys. Lett. 2013, 30 (5):
056802
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DOI: 10.1088/0256-307X/30/5/056802
Interaction with the substrate plays an essential role in determining the structure and electronic property of graphene supported by a surface. We observe a maze-like reconstruction pattern in graphene on flat copper foil. With functionalized scanning tunneling microscope tips, a triangular three-for-six structure of graphene and a mixed (2√2 ×√2 )R45° reconstruction of a Cu(100) surface are separately visualized at the atomic scale. Substrate-induced changes in the structure and electronic property are further illustrated by micro-Raman spectroscopy and scanning tunneling spectroscopy. This finding suggests a new method to effectively induce partial sp3 hybridization in a single-layer graphene and therefore to tune its electronic property through interaction with the substrate.
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The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy
WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong
Chin. Phys. Lett. 2013, 30 (5):
057101
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DOI: 10.1088/0256-307X/30/5/057101
The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ~0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.
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GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation
XU Wei-Zong, FU Li-Hua, LU Hai, REN Fang-Fang, CHEN Dun-Jun, ZHANG Rong, ZHENG You-Dou
Chin. Phys. Lett. 2013, 30 (5):
057303
.
DOI: 10.1088/0256-307X/30/5/057303
Edge termination is one of the key technologies for fabricating high voltage Schottky barrier diodes (SBDs), which could effectively reduce the peak electric field along the Schottky contact edge and enhance the breakdown voltage. We adopt a high-resistivity ring structure as the edge termination for planar GaN SBDs. The edge termination is formed by self-aligned boron implantation on the edge of devices to form a highly damaged layer. In the implant dose and energy ranges studied experimentally, the GaN SBDs show improved blocking characteristics in terms of reverse leakage current and breakdown voltage at higher implant dose or implant energy. Meanwhile, the forward turn-on characteristics of the GaN SBDs exhibit no apparent change.
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The Generalized Joint Density of States and Its Application to Exploring the Pairing Symmetry of High-Tc Superconductors
ZHANG Dan-Bo, HAN Qiang, WANG Zi-Dan
Chin. Phys. Lett. 2013, 30 (5):
057401
.
DOI: 10.1088/0256-307X/30/5/057401
We introduce a generalized joint density of states (GJDOS), which incorporates the coherent factors into the JDOS, to study quasiparticle interference (QPI) in superconductors. The intimate relation between the Fourier-transformed local density of states and GJDOS is revealed: they correspond respectively to the real and imaginary parts of a generalized impurity-response function, and particularly share the same angular factors and singular boundaries, as seen from our approximate analytic results for d-wave superconductors. Remarkably, our numerical GJDOS analysis agrees well with the QPI patten of d-wave cuprates and s±-wave iron-based superconductors. Moreover, we illustrate that the present GJDOS scenario can uncover the sign features of the superconducting gap and thus can be used to explore the pairing symmetry of the A1?xFe2?ySe2 (A=K,Cs, etc) superconductors.
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GeTe4 as a Candidate for Phase Change Memory Application
LI Run, TANG Shi-Yu, BAI Gang, YIN Qiao-Nan, LAN Xue-Xin, XIA Yi-Dong, YIN Jiang, LIU Zhi-Guo
Chin. Phys. Lett. 2013, 30 (5):
058101
.
DOI: 10.1088/0256-307X/30/5/058101
GeTe4 films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge2Sb2Te5, the GeTe4 film exhibits a higher crystallization temperature (235°C), better data retention of ten years at 129°C, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×104.
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InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric
MAO Wei, HAO Yue, YANG Cui, ZHANG Jin-Cheng, MA Xiao-Hua, WANG Chong, LIU Hong-Xia, YANG Lin-An, ZHANG Jin-Feng, ZHENG Xue-Feng, ZHANG Kai, CHEN Yong-He, YANG Li-Yuan
Chin. Phys. Lett. 2013, 30 (5):
058502
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DOI: 10.1088/0256-307X/30/5/058502
We report the studies of In0.15Al0.85N/AlN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors with a field plate (FP) and a plasma-enhanced chemical vapor deposition (PECVD) SiN layer as the gate dielectric as well as the surface passivation layer (FP-MIS HEMTs). Compared with conventional In0.15Al0.85N/AlN/GaN high electron mobility transistors (HEMTs) of the same dimensions, the FP-MIS HEMTs exhibit a maximum drain current of 1211 mA/mm, a breakdown voltage of 120 V, an effective suppression of current collapse, about one order of magnitude reduction in reverse gate leakage, as well as more than five orders of magnitude reduction in forward gate leakage. These results confirm the potential of PECVD SiN in the application of the InAlN/AlN/GaN FP-MIS HEMTs.
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Differentiating Neutron Star Models by X-Ray Polarimetry
LU Ji-Guang, XU Ren-Xin, FENG Hua
Chin. Phys. Lett. 2013, 30 (5):
059501
.
DOI: 10.1088/0256-307X/30/5/059501
The nature of pulsars is still unknown because of the non-perturbative effects of the fundamental strong interaction, so various models of pulsar inner structures are suggested, either for conventional neutron stars or quark stars. Additionally, a quark-cluster matter state is conjectured for cold matter at supranuclear density, and as a result pulsars can be quark-cluster stars. Besides understanding the different manifestations, the most important issue is to find an effective way to observationally differentiate these models. X-ray polarimetry plays an important role here. The thermal x-ray polarization of quark/quark-cluster stars is focused on, and while the thermal x-ray linear polarization percentage is typically higher than ~10% in normal neutron star models, the percentage of quark/quark-cluster stars is almost zero. This could then be an effective method to identify quark/quark-cluster stars by soft x-ray polarimetry. We are therefore expecting to detect thermal x-ray polarization in the coming decades.
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51 articles
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