| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature |
| ALIREZA Samavati1**,S. K. Ghoshal2,Z. Othaman1 |
1Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai, Johor Baharu, Malaysia
2Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia |
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ALIREZA Samavati, S. K. Ghoshal, Z. Othaman 2012 Chin. Phys. Lett. 29 048101 |
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Abstract Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600°C, 700°C and 800°C for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x−ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ∼0.29 eV in the PL peak is observed with increasing annealing temperature.
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Received: 05 November 2011
Published: 04 April 2012
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