| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Leakage Current Simulation of Insulating Thin Film Irradiated by a Nonpenetrating Electron Beam |
| ZHANG Hai-Bo1**,LI Wei-Qin2,CAO Meng1 |
1Key Laboratory for Physical Electronics and Devices of MOE, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049
2School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048 |
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| Cite this article: |
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ZHANG Hai-Bo, LI Wei-Qin, CAO Meng 2012 Chin. Phys. Lett. 29 047901 |
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Abstract We perform numerical simulations of the leakage current characteristics of an insulating thin film of SiO2 negatively charged by a low-energy nonpenetrating focused electron beam. For the formation of leakage current, electrons are demonstrated to turn from diffusion to drift after clearing the minimum potential barrier due to electron-hole separation. In the equilibrium state, the leakage current increases approximately linearly with the increasing primary beam current and energy. It also increases with the increasing film thickness and trap density, and with the decreasing electron mobility, in which the film thickness has a greater influence. Validated by some existing experiments, the simulation results provide a new perspective for the negative charging effects of insulating samples due to the low-energy focused electron beam.
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Received: 18 November 2011
Published: 04 April 2012
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| PACS: |
79.20.Ap
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(Theory of impact phenomena; numerical simulation)
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73.61.Ng
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(Insulators)
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68.37.Hk
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(Scanning electron microscopy (SEM) (including EBIC))
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