| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes |
| LI Bin, YANG Huai-Wei, GUI Qiang, YANG Xiao-Hong, WANG Jie, WANG Xiu-Ping, LIU Shao-Qing, HAN Qin** |
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
|
|
| Cite this article: |
|
LI Bin, YANG Huai-Wei, GUI Qiang et al 2012 Chin. Phys. Lett. 29 118503 |
|
|
|
|
Abstract A separate absorption, grading, charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated. It has a thin multiplication layer and a planar structure. Through the use of a well and a single floating guard ring to suppress edge breakdown, the device can easily be fabricated by one step epitaxial growth and one step diffusion. The dark current of a 30 μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90% of the breakdown voltage. The responsivity at 1.55 μm is 0.93 A/W at unity gain and the multiplication layer is estimated to be less than 300 nm.
|
|
|
Received: 28 June 2012
Published: 28 November 2012
|
|
| PACS: |
85.60.Gz
|
(Photodetectors (including infrared and CCD detectors))
|
| |
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
81.15.Hi
|
(Molecular, atomic, ion, and chemical beam epitaxy)
|
|
|
|
|
|
[1] Liu S Q, Han Q Zhu B, Yang X H, Ni H Q, He J F, Wang X and Niu Z C 2012 Chin. Phys. Lett. 29 038501
[2] Yagyu E, Ishimura E, Nakaji M, Mikami Y, Aoyagi T, Yoshiara K and Tokuda Y 2007 IEEE Photon. Technol. Lett. 19 765
[3] Hyun K S, Paek Y, Kwon Y H, Yun I and Lee E H 2003 Proc. SPIE 4999 130
[4] Wei J, Dries C, Wang H, Lange M L, Olsen G H and Forrest S R 2002 IEEE Photon. Technol. Lett. 14 977
[5] Tarof L E, Knight D G, Fox K E, Miner C J, Puetz N and Kim H B 1990 Appl. Phys. Lett. 57 670
[6] Tarof L E, Bruce R, Knight D G, Yu J, Kim H B and Baird T 1995 IEEE Photon. Technol. Lett. 7 1330
[7] Cho S R, Yang S K, Ma J S, Lee S D, Yu J S, Choo A G, Kim T I and Brum J 2000 IEEE Photon. Technol. Lett. 12 534
[8] Zhou P, Li C F, Liao C J, Wei Z J and Yuan S Q 2011 Chin. Phys. B 20 028502
[9] Tan L J J, Ng J S, Tan C H and David J P R 2008 IEEE J. Quantum Electron. 44 378
[10] Lahrichi M, Glastre G, Carpentier D, Lagay N, Decobert J and Achouche M 2010 IEEE Photon. Technol. Lett. 22 1373 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
