| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Si-Nanocrystals with Bimodal Size Distribution in Evenly Annealed SiO Revealed with Raman Scattering |
| KE Wei-Wei, FENG Xue**, HUANG Yi-Dong |
| State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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KE Wei-Wei, FENG Xue, HUANG Yi-Dong 2012 Chin. Phys. Lett. 29 016402 |
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Abstract The size distribution of Si-nanocrystals (Si-ncs) in evenly annealed SiO is investigated with transmission electron microscopy (TEM), x-ray diffraction (XRD), and Raman scattering. Two groups of Si-ncs with very different most probable diameters are identified, where one is >6 nm and the other one is < 2 nm. Both of them increase gradually with increasing annealing temperature. Such a phenomenon is observed directly by TEM for samples with larger Si−ncs (>10 nm) and it can be revealed clearly for all samples by Raman spectra with two components (∼500 cm−1 and ∼520 cm−1). The results of XRD show the average effect. The experimental results indicate that the common assumption of Si-nc size distribution with single most probable diameter is not always proper and the possible mechanisms are briefly discussed.
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| Keywords:
64.75.Jk
61.72.Uf
81.16.-c
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Received: 03 November 2011
Published: 07 February 2012
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| PACS: |
64.75.Jk
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(Phase separation and segregation in nanoscale systems)
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61.72.uf
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(Ge and Si)
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81.16.-c
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(Methods of micro- and nanofabrication and processing)
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