| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition |
| GUO Xiao-Song, BAO Zhong, ZHANG Shan-Shan, XIE Er-Qing**
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Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Physical Science and Technology School, Lanzhou University, Lanzhou 730000
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| Cite this article: |
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GUO Xiao-Song, BAO Zhong, ZHANG Shan-Shan et al 2011 Chin. Phys. Lett. 28 028101 |
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Abstract Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition. A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature T fil from 1600 °C to 1650 °C was observed. This phenomenon may result from the associated abundance of H radicals participating in the growth of the films. A probability distribution model of the H radical is proposed to elucidate this phenomenon. According to this model, the phase transition is due to a distinct difference in the probability distribution of the H radicals, which seems to be dependent upon Tfil.
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| Keywords:
81.07.Bc
81.10.Aj
61.05.Cp
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Received: 16 August 2010
Published: 30 January 2011
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| PACS: |
81.07.Bc
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(Nanocrystalline materials)
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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61.05.cp
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(X-ray diffraction)
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