| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures |
| YANG Xin-Rong1**, XU Bo2, WANG Hai-Fei1, ZHAO Guo-Qing1, SHI Shu-Hui1, SHEN Xiao-Zhi1, LI Jun-Feng1, WANG Zhan-Guo2
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1Department of Physics and Electronic Engineering, Handan College, Handan 056005
2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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| Cite this article: |
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YANG Xin-Rong, XU Bo, WANG Hai-Fei et al 2011 Chin. Phys. Lett. 28 027801 |
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Abstract Self-assembled InAs quantum wires (QWRs) are fabricated on an InP substrate by solid-source molecular beam epitaxy (SSMBE). Photoluminescence (PL) spectra are investigated in these nanostructures as a function of temperature. An anomalous enhancement of PL intensity and a temperature insensitive PL emission are observed from InAs nanostructures grown on InP substrates using InAlGaAs as the matrix layer and the origin of this phenomenon is discussed. We attribute the anomalous temperature dependence of photoluminescence to the formation of Al-rich and In-rich region in the InAlGaAs buffer layer and the cap layer.
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| Keywords:
78.67.-n
78.66.Tr
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Received: 09 July 2010
Published: 30 January 2011
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| PACS: |
78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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78.66.Tr
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(Fullerenes and related materials)
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