| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Up-Conversion Photostimulated Luminescence of Mg2SnO4 for Optical Storage |
| ZHANG Jia-Chi**, QIN Qing-Song, YU Ming-Hui, SUN Jia-Yao, SHI Liu-Rong, MA Xin-Long
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College of Physical Science and Technology, Lanzhou University, Lanzhou 730000
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| Cite this article: |
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ZHANG Jia-Chi, QIN Qing-Song, YU Ming-Hui et al 2011 Chin. Phys. Lett. 28 027802 |
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Abstract We report the first observation of up-conversion photostimulated luminescence in non-doped Mg2SnO4. Stimulated by 980 nm infrared laser (reading) after ultraviolet irradiation (writing), the phosphor shows photostimulated emission band covering 470–550 nm, which is due to the recombination of F centers with holes. After ceasing ultraviolet irradiation, the storage intensity would rapidly decrease to 59% of its original storage intensity in 2.5 h and then would not degrade anymore. It is suggested that the Mg2SnO4 has potential applications for optical storage. Accordingly, the possible photostimulated luminescence mechanisms of Mg2SnO4 are proposed.
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| Keywords:
78.55.-m
78.60.Lc
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Received: 06 August 2010
Published: 30 January 2011
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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78.60.Lc
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(Optically stimulated luminescence)
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