| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Simulation and Suppression of the Gas Phase Pre-reaction in Metal-Organic Chemical Vapor Deposition of ZnO |
| ZHU Guang-Yao, GU Shu-Lin**, ZHU Shun-Ming, TANG Kun, YE Jian-Dong, ZHANG Rong, SHI Yi, ZHENG You-Dou
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Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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ZHU Guang-Yao, GU Shu-Lin, ZHU Shun-Ming et al 2011 Chin. Phys. Lett. 28 116803 |
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Abstract The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented, indicating the temperature of the reaction species. The gas phase pre-reaction can be modulated by several factors or conditions. Simulations verify the relationships between temperature and pyrolysis of precursors, and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution. The experimental results agree with the simulations.
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| Keywords:
68.55.Ag
81.15.Gh
82.20.Wt
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Received: 17 April 2011
Published: 30 October 2011
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| PACS: |
68.55.ag
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(Semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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82.20.Wt
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(Computational modeling; simulation)
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