| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition |
| LI Li-Gong1,2, LIU Shu-Man1**, LUO Shuai1, YANG Tao1, WANG Li-Jun1, LIU Feng-Qi1, YE Xiao-Ling1, XU Bo1, WANG Zhan-Guo1
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1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, Tsinghua University, Beijing 100084
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| Cite this article: |
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LI Li-Gong, LIU Shu-Man, LUO Shuai et al 2011 Chin. Phys. Lett. 28 116802 |
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Abstract InAs/GaSb type-II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition. Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like (plane of mixed As and Sb atoms that connect the GaSb and InAs layers) interfaces. Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers. X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.
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| Keywords:
68.65.Cd
81.15.Gh
85.60.Gz
81.05.Ea
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Received: 19 August 2011
Published: 30 October 2011
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| PACS: |
68.65.Cd
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(Superlattices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.05.Ea
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(III-V semiconductors)
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