| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Channel Length and Width on NBTI in Ultra Deep Sub-Micron PMOSFETs |
| CAO Yan-Rong1, MA Xiao-Hua2, HAO Yue3, TIAN Wen-Chao1 |
| 1School of Mechano-electric Engineering, Xidian University, Xi'an 710071 2School of Technical Physics, Xidian University, Xi'an 710071 3Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 |
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| Cite this article: |
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CAO Yan-Rong, MA Xiao-Hua, HAO Yue et al 2010 Chin. Phys. Lett. 27 037301 |
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| Keywords:
73.40.Qv
85.30.Tv
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Received: 01 August 2009
Published: 09 March 2010
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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