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Bell Operator Method to Classify Local Realistic Theories
Koji Nagata
Chin. Phys. Lett. 2010, 27 (3):
030305
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DOI: 10.1088/0256-307X/27/3/030305
We review the historical fact of multipartite Bell inequalities with an arbitrary number of settings. An explicit local realistic model for the values of a correlation function, given in a two-setting Bell experiment (two-setting model), works only for the specific set of settings in the given experiment, but cannot construct a local realistic model for the values of a correlation function, given in a continuous-infinite settings Bell experiment (infinite-setting model), even though there exist two-setting models for all directions in space. Hence, the two-setting model does not have the property that the infinite-setting model has. Here, we show that an explicit two-setting model cannot construct a local realistic model for the values of a correlation function, given in an M-setting Bell experiment (M-setting model), even though there exist two-setting models for the M measurement directions chosen in the given M-setting experiment. Hence, the two-setting model does not have the property that the M-setting model has.
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Probe R-Parity Violating Supersymmetry in Forward--Backward Asymmetry
GUO Lei, HAN Liang, MA Wen-Gan, XI Yun-Feng, YANG Si-Qi, ZHANG Ren-You
Chin. Phys. Lett. 2010, 27 (3):
031301
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DOI: 10.1088/0256-307X/27/3/031301
We investigate the possibility of probing R-parity violating interactions in forward-backward asymmetries, and conclude that the Tevatron collider is the best place to measure new interactions involving the first generation of quarks. With additional down type squark ~dk contributions, the charge asymmetry in e+e— events around Z-pole mass region at the Tevatron will be sensitive to R-parity violating couplings λ’11k, which was inaccessible to the LEP Qfb had inclusive measurement. Assuming no apparent deviation from SM prediction is observed, λ’11k< 0.19 at 95% C.L. with squark mass M~dk=100 GeV can be derived.
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Excited States in 18Ne Studied via 17F+p *
JIN Sun-Jun, , WANG You-Bao, WANG Bao-Xiang, BAI Xi-Xiang, FANG Xiao, GUO Bing, LI Er-Tao, LI Yun-Ju, LI Zhi-Hong, LIAN Gang, SU Jun, YAN Sheng-Quan, ZENG Sheng, YAO Ze-En, LIU Wei-Ping
Chin. Phys. Lett. 2010, 27 (3):
032102
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DOI: 10.1088/0256-307X/27/3/032102
The elastic resonance scattering of 17F+p is studied in inverse kinematics via a thick-target method. The excitation function for 17F+p elastic scattering is obtained within the energy interval of Ec.m ≈ 0.4-1.7 MeV. The experimental excitation function is analyzed with a multilevel R-matrix code MULTI7, and the proton widths are deduced. The α decay from 6.15 MeV 1- state in 18Ne is observed, which is critical to the 14O(α, p)17F reaction as the main breakout route from CNO cycle to rp-process in supernovae and x-ray bursts.
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Experimental Study on the Exotic Structure of 12N in RIBLL
LI Jia-Xing, LIU Ping-Ping, WANG Jian-Song, HU Zheng-Guo, MAO Rui-Shi, LI Chen, CHEN Ruo-Fu, SUN Zhi-Yu, XU Hu-Shan, XIAO Guo-Qing, GUO Zhong-Yan
Chin. Phys. Lett. 2010, 27 (3):
032501
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DOI: 10.1088/0256-307X/27/3/032501
We measured the total reaction cross sections of 12N in Si at 36.2 MeV/u using Radioactive Ion Beam Line in Lanzhou (RIBLL) with a new method. The reaction target was installed at the intermediate focusing point T1 at RIBLL. This scheme allows us to identify particles before and after the reaction target unambiguously. The total reaction cross section (1760±78 mb) of 12N in Si is obtained. Assuming that 12N consists of a core 11C plus one halo proton, the excitation function of 12N on the Si and C targets is calculated with the Glauber model and the Fermi-Fermi density distributions. It can fit the experimental data very well. A large diffusion of the protons density distribution supports the halo structure for 12N.
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Theoretical Study of Interesting Fine-Structure Splittings Based on a Scenario for Precise Calculations
ZHANG Xiao-Le, CHENG Cheng, GAO Xiang, LI Jia-Ming,
Chin. Phys. Lett. 2010, 27 (3):
033101
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DOI: 10.1088/0256-307X/27/3/033101
Based on the multi-configuration Dirac-Fock self-consistent field method, a scenario has been presented to calculate the fine-structure energy levels of C2+ and Si2+ excited states (31 D2 and 33D1,2,3). The Breit interactions and quantum electrodynamics corrections are added as perturbations. The present calculation results are found to be in excellent agreement with the experimental data. By means of the precise calculation procedure, we elucidate that four competitive mechanisms influence the interesting fine-structure splittings in C2+ and Si2+, such as spin-orbit interactions, relativistic corrections of exchange interactions, the Breit interactions and electron correlation effects. Furthermore, the mechanism of relativistic correction of exchange interactions has been studied clearly. We elucidate that the inner shell 2p1/2,3/2 orbitals are essential to relativistic corrections of exchange interactions which are crucial for the final anomalous fine-structure splittings.
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Dual-Band Negative-Index Materials with Sandwich Configuration
WANG Xu-Dong, YE Yong-Hong, ZHENG Chao
Chin. Phys. Lett. 2010, 27 (3):
034103
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DOI: 10.1088/0256-307X/27/3/034103
Dual-band negative-index properties of the silver-SU-8-silver sandwich configuration, perforated with a square array of cross dipole apertures, are simulated and analyzed in the midinfrared region. The first and the second negative-index bands correspond to the (1,0) and (1,1) internal surface plasmon polariton (SPP) modes, respectively. The internal and external SPP modes acquired by the SPP dispersion relation of the metal/dielectric/metal model match well with the simulated transmission peaks. The effective parameters for the two negative-index bands are retrieved using simulated S parameters. The coupling effect between the (1,1) internal SPP mode and the localized resonance mode can be tuned by the arm length of cross dipole, which can weaken or destroy the negative electromagnetic response of the second negative-index band. The electric quadrupole mode of the second negative-index band accounts for its strong dependence on the dielectric loss of the interlayer.
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Experimental Verification of Left-Handed Metamaterials Composed of Coplanar Electric and Magnetic Resonators
WANG Jia-Fu, QU Shao-Bo, XU Zhuo, XIA Song, MA Hua, WANG Qian, YANG Yi-Ming, WU Xiang
Chin. Phys. Lett. 2010, 27 (3):
034104
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DOI: 10.1088/0256-307X/27/3/034104
We verified experimentally left-handed metamaterials (LHM) composed of coplanar electric and magnetic resonators. A typical LHM sample composed of coplanar resonator unit cells was fabricated, investigated and tested. The experimental results show that the tested sample has a left-handed band of width 1.4 GHz in the X band. The experimental results agree quite well with the simulation ones. Moreover, both the simulation and experimental results show that the LHM under study can automatically achieve good impedance-matching in the left-handed band.
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Numerical Simulations of Backward-to-Forward Leaky-Wave Antenna with Composite Right/Left-Handed Coplanar Waveguide
SI Li-Ming, SUN Hou-Jun, LV Xin
Chin. Phys. Lett. 2010, 27 (3):
034106
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DOI: 10.1088/0256-307X/27/3/034106
A composite right/left-handed (CRLH) coplanar waveguide (CPW) structure and its leaky-wave antenna (LWA) with continuous backward-to-forward scanning applications are proposed. The structure of the CRLH transmission line (TL) is composed of split-ring resonators (SRRs) for left-handed (LH) series capacitance and short-circuited stubs connected between the CPW central signal line and the ground for LH shunt inductance, while the unavoidable right-handed (RH) parasitic effects series inductance and shunt capacitance are generated by wave propagation through the host transmission line. The dispersion relations are calculated and compared with the equivalent circuit model method and 3D full-wave simulations, which can be used to determine the physical dimensions of the CRLH-CPW, such as in the balanced CRLH-TL case. As a main example, a CRLH-CPW-LWA operating from 1.67 GHz to 1.80 GHz with the dispersion characteristics of the balanced CRLH-TL case shows continuous leakage frequency band (fast wave region) from LH (phase constant β <0, .67<f<1.74 GHz) to RH (β>0, 1.74<f<1.80 GHz) state through the transition frequency point (β=0, f=1.74 GHz), whereas conventional LWAs operated in RH state only provide forward scanning capabilities (β>0).
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Diode Pumped Operation of Tm,Ho:YVO4 Microchip Laser
LI Gang, YAO Bao-Quan, ZHANG Chao-Hui, WANG Qiang, WANG Yue-Zhu, JU You-Lun
Chin. Phys. Lett. 2010, 27 (3):
034201
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DOI: 10.1088/0256-307X/27/3/034201
A cryogenic and room-temperature diode pumped Tm,Ho:YVO4 microchip laser with 0.5 mm crystal length lasing around 2μm is demonstrated for the first time to our knowledge. Under cryogenic temperature of 77 K, as much as 1.2 W output and slope efficiency of 35% with respect to absorbed pump power are obtained. At temperature of 5ºC the maximum output power of 48mW is obtained at an absorbed pump power of 503 mW, representing a 9.5% optical to optical conversion efficiency. In addition, as much as 8 mW single-frequency output lasing at 2052.6 nm is achieved at room temperature of 15ºC.
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Intensity Distribution and Phase Vortices of Speckle Fields Generated by Multi-Aperture Random Scattering Screens
LIU Man, SONG Hong-Sheng, CHEN Xiao-Yi, LIU Gui-Yuan, TENG Shu-Yun, CHENG Chuan-Fu
Chin. Phys. Lett. 2010, 27 (3):
034202
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DOI: 10.1088/0256-307X/27/3/034202
The intensity distribution and phase vortices of the speckle fields generated by multi-aperture random scattering screens are simulated, and it is found that the vortices exhibit layer-like structures and the dislocation phenomena occur in the local phase patterns produced by the two-pinhole aperture, whose phase distributions appear as striped structures. For three- or four-pinhole aperture, there are many circular bright spots appearing in the speckle grains, and there is one vortex between the neighboring circular bright spots. The positive and negative phase vortex lattices appear in the phase distributions, and the regions circled by the isothetic phase lines form irregular quadrilaterals or hexagons. Moreover, the relative positions of the vortices or bright spots can be adjusted by changing those of the pinhole apertures.
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Transverse Inhomogeneous Carrier-Envelope Phase Distribution of Idler Generated through Difference-Frequency-Generation
QIU Ping, WANG Ke, ZHU He-Yuan, QIAN Lie-Jia
Chin. Phys. Lett. 2010, 27 (3):
034204
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DOI: 10.1088/0256-307X/27/3/034204
The transverse inhomogeneous carrier-envelope phase (CEP) distribution of idler generated through difference-frequency-generation (DFG) in quadratic nonlinear crystals is theoretically studied. In practical CEP stabilized DFG setups, the pump and the signal are usually Gaussian beams with non-uniform intensity distribution. Since the idler CEP is dependent on gain, this non-uniform intensity distribution leads to inhomogeneous gain across the aperture of the idler beam, resulting in a varying transverse idler CEP. Simulation results show that in practical settings, in the high-gain regime, transverse inhomogeneous CEP can be much smaller compared with π/2. However, when gain on the propagation axis reaches saturation, CEP difference can well exceed π/2.
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Numerical Study on Light Localization in Impedance-Matched Meta-Material Random Systems
CHEN Hui-Ping, YAO Pei-Jun, LIANG Zi-Xian, JIANG Xun-Ya, HAN Wen-Da
Chin. Phys. Lett. 2010, 27 (3):
034206
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DOI: 10.1088/0256-307X/27/3/034206
We investigate the localization properties of light propagating in two-dimensional systems with impedance-matched meta-material scatterers which are randomly positioned. Numerically, the localization length ξ versus the index of meta-material is obtained first. We find that, unlike traditional random systems, the localization length of such meta-material random systems does not depend on the total scattering cross section of scatterers, but on the back-scattering cross-section of scatterers. Furthermore, our analysis shows that there are “back-scattering paths of single scattere” in such meta-material systems, which can cause a strong localization effect. Such back-scattering paths inside single scatterers can be thought of as the supplement to the traditional back-scattering paths of multiple scatterers.
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A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser
JI Hai-Ming, YANG Tao, CAO Yu-Lian, XU Peng-Fei, GU Yong-Xian, LIU Yu, XIE Liang, WANG Zhan-Guo
Chin. Phys. Lett. 2010, 27 (3):
034209
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DOI: 10.1088/0256-307X/27/3/034209
We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50ºC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.
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Strong-Superstrong Transition in Glass Transition of Metallic Glass
WANG Dan, PENG Hong-Yan, XU Xiao-Yu, CHEN Bao-Ling, WU Chun-Lei, SUN Min-Hua
Chin. Phys. Lett. 2010, 27 (3):
036401
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DOI: 10.1088/0256-307X/27/3/036401
Dynamic fragility of bulk metallic glass (BMG) of Zr64Cu16Ni10Al10 alloy is studied by three-point beam bending methods. The fragility parameter mfor Zr64Cu16Ni10Al10 BMG is calculated to be 24.5 at high temperature, which means that the liquid is a "strong" liquid, while to be 13.4 at low temperature which means that the liquid is a "super-strong" liquid. The dynamical behavior of Zr64Cu16Ni10Al10 BMG in the supercooled region undergoes a strong to super-strong transition. To our knowledge, it is the first time that a strong-to-superstrong transition is found in the metallic glass. Using small angle x-ray scattering experiments, we find that this transition is assumed to be related to a phase separation process in supercooled liquid.
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Phase Transition Behavior of LiCr 0.35 Mn0.65O2 under High Pressure by Electrical Conductivity Measurement
CUI Xiao-Yan, HU Ting-Jing, HAN Yong-Hao, GAO Chun-Xiao, PENG Gang, LIU Cai-Long, WU Bao-Jia, WANG Yue, LIU Bao, REN Wan-Bin, LI Yan, SU Ning-Ning, ZOU Guang-Tian, DU Fei, CHEN Gang
Chin. Phys. Lett. 2010, 27 (3):
036402
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DOI: 10.1088/0256-307X/27/3/036402
The electrical conductivity of powdered LiCr 0.35 Mn0.65O2 is measured under high pressure up to 26.22 GPa in the temperature range 300-413 K by using a diamond anvil cell. It is found that both conductivity and activation enthalpy change discontinuously at 5.36 GPa and 21.66 GPa. In the pressure range 1.10-5.36 GPa, pressure increases the activation enthalpy and reduces the carrier scattering, which finally leads to the conductivity increase. In the pressure ranges 6.32-21.66 GPa and 22.60-26.22 GPa, the activation enthalpy decreases with pressure increasing, which has a positive contribution to electrical conductivity increase. Two pressure-induced structural phase transitions are found by in-situ x-ray diffraction under high pressure, which results in the discontinuous changes of conductivity and activation enthalpy.
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Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures
DONG Xun, LI Zhong-Hui, LI Zhe-Yang, ZHOU Jian-Jun, LI Liang, LI Yun, ZHANG Lan, XU Xiao-Jun, XU Xuan, HAN Chun-Lin
Chin. Phys. Lett. 2010, 27 (3):
037102
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DOI: 10.1088/0256-307X/27/3/037102
InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas (2DEG) mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.
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First-Principles Study of Electronic and Optical Properties of Y1-xCaxTiO3 (x=0, 0.25, 0.5, 0.75)
GONG Sai, WANG Yue-Hua, ZHAO Na, DUAN Yi-Feng
Chin. Phys. Lett. 2010, 27 (3):
037103
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DOI: 10.1088/0256-307X/27/3/037103
The full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA) is applied to study the electronic and optical properties of perovskite-type compounds Y1-xCaxTiO3. The lattice parameters, magnetic moment, band structure, density of states and optical conductivity are obtained. The results show that the Ca ion plays an important role in the electronic properties and optical responses. Moreover, the optical properties including the dielectric function, absorption spectrum, extinction coefficient, energy-loss spectrum and refractive index are also discussed.
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Luminescence Properties of Sr2SnO4:Sm3+ Afterglow Phosphor
LEI Bing-Fu, YUE Song, ZHANG Yong-Zhe, LIU Ying-Liang
Chin. Phys. Lett. 2010, 27 (3):
037201
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DOI: 10.1088/0256-307X/27/3/037201
A new long-lasting phosphorescence (LLP) phosphor, Sr2SnO4:Sm3+ which emits reddish-orange LLP upon UV-excitation, is prepared by a conventional high-temperature solid-state method. After irradiation under 247-nm UV light, Sr2SnO4:Sm3+ emits an intense reddish-orange emission afterglow from the 4G5/2 to 6HJ (J = 5/2,7/2,9/2) transitions. The afterglow decay curve of the Sm3+-doped Sr2SnO4 phosphor contains a fast decay component and another slow decay one. Due to the presence of the slow decay component, the afterglow can be seen with the naked eye in the dark clearly for more than 1 h after removal of the excitation source.
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Sizable Residual Quasiparticle Density of States Induced by Impurity Scattering Effect in Ba(Fe1-xCox)2As2 Single Crystals
MU Gang, ZENG Bin, CHENG Peng, WANG Zhao-Sheng, FANG Lei, SHEN Bing, SHAN Lei, REN Cong, WEN Hai-Hu
Chin. Phys. Lett. 2010, 27 (3):
037402
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DOI: 10.1088/0256-307X/27/3/037402
Low-temperature specific heat Cp is measured on Ba(Fe1-xCox)2As2 single crystals in a wide doping region. A sizeable residual specific heat coefficient γo is observed in the low temperature limit of all samples. The specific heat jump near Tc, i.e. ΔCp/T\T_c, is also determined. It is found that -γo, ΔCp/T\T_c and Tc all share a similar evolution with doping. These can be well understood within the model of S± pairing symmetry when accounting for the cobalt-dopants as unitary scattering centers in the FeAs planes. Our results reveal a non-trivial impact of impurity scattering in FeAs-based.
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Preparation of High-Density Nanocrystalline Bulk Selenium by Rapid Compressing of Melt
HU Yun, SU Lei, LIU Xiu-Ru, SUN Zhen-Ya, LV Shi-Jie, YUAN Chao-Sheng, JIA Ru, SHEN Ru, HONG Shi-Ming
Chin. Phys. Lett. 2010, 27 (3):
038101
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DOI: 10.1088/0256-307X/27/3/038101
The melt's solidification behavior of elemental selenium is investigated by a series of experiments including rapid compressing to 2.8 and 3.5 GPa within 20ms respectively, slow compressing to 2.8 GPa for 20 min and natural cooling at ambient pressure. Based on the x-ray diffraction, scanning electron microscope and transmission electron microscope results of the recovered samples, it is clearly shown that homogenous nanostructures are formed only by the rapid compression processes, and that the average crystal sizes are about 18.7 and 19.0 nm in the samples recovered from 2.8 and 3.5 GPa, respectively. The relative density of the nanocrystalline bulk reaches 98.17% of the theoretical value. It is suggested that rapid compression could induce pervasive nucleation and restrain grain growth during the solidification, which is related to fast supercooling, higher viscosity of the melt and lower diffusivity of atoms under high pressure.
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Fabrication of Mn-Doped GaN Nanobars
XUE Cheng-Shan, LIU Wen-Jun, SHI Feng, ZHUANG Hui-Zhao, GUO Yong-Fu, CAO Yu-Ping, SUN Hai-Bo
Chin. Phys. Lett. 2010, 27 (3):
038102
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DOI: 10.1088/0256-307X/27/3/038102
We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000ºC. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift (409 nm) are comparable to pure GaN(370 nm) at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.
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Two-Photon Fluorescence Property and Ultrafast Dynamics of Two Dipolar Compounds with Dipicolinate as Electron Acceptor
WANG Yao-Chuan, ZHOU Hui, DING Jin-Liang, CHEN Qiang, XIAO Hai-Bo, TAO Xiao-Ming, QIAN Shi-Xiong
Chin. Phys. Lett. 2010, 27 (3):
038201
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DOI: 10.1088/0256-307X/27/3/038201
Linear and nonlinear photophysical properties of two novel dipolar compounds named as trans- dimethyl-4-[4'-(N,N-dimethylamino)-styry1]-pyridin-2,6-dicarboxylate (Xiao-1) and trans-dimethyl-4-[4'-(N,N-diphenylamino)-styry1]-pyridin-2,6-dicarboxylate (Xiao-2) are investigated by steady-state absorption and fluorescence spectroscopy, Z-scan and two-photon excited fluorescence measurements. Strong two-photon fluorescence emission and the pronounced positive solvatochromism are observed from two compounds. The two-photon absorption cross section of Xiao-2 is about 1.5 times larger than that of Xiao-1. One-color and two-color femtosecond pump-probe experiments are employed to investigate the excited state dynamics of two compounds. The relaxation lifetime of the intra-molecular charge transfer state is determined to be in the hundreds of picosecond domain for both the compounds in THF, and several tens of picosecond in DMSO solutions.
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A Study on Porosity Distribution in Nanoporous TiO_2 Photoelectrodes for Output Performance of Dye-Sensitized Solar Cells
XU Wei-Wei, HU Lin-Hua, DAI Song-Yuan, ZHANG Chang-Neng, LUO Xiang-Dong, JING Wei-Ping
Chin. Phys. Lett. 2010, 27 (3):
038202
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DOI: 10.1088/0256-307X/27/3/038202
Porosity as one of the crucial factors to film morphology affects the overall electrical current-voltage characteristics of dye-sensitized solar cell (DSC). We search for the short-circuit current density, the open-circuit voltage and the maximum power output as the main functional parameters of DSC closely related to porosity under different film thickness. The theoretical analyses show some exciting results. As porosity changes from 0.41 to 0.75, the short-circuit current density shows the optimal value when the film thickness is 8-10 μm. The open-circuit voltage presents different variation tendencies for the film thicknesses within 1-8 μm and within 10-30 μm. The porosity is near 0.41 and the film thickness is about 10 μm, DSC will have the maximum power output. The theoretical studies also illustrate that given a good porosity distribution, DSC can obtain an excellent short-circuit current characteristic, which agrees well with the experimental results reported in previous literature.
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Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs
ZHU Bin, HAN Qin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, NIU Zhi-Chuan, WANG Xin, WANG Xiu-Ping, WANG Jie
Chin. Phys. Lett. 2010, 27 (3):
038504
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DOI: 10.1088/0256-307X/27/3/038504
Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10-6 A/cm2 at 0 V bias and 2.24 × 10-4 A/cm2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.
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Assessment of Primordial Radionuclides in Pakistani Red Bricks and Associated Radiation Doses
K. Khan, A. Jabbar, P. Akhter, M. Tufail, H. M. Khan
Chin. Phys. Lett. 2010, 27 (3):
039301
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DOI: 10.1088/0256-307X/27/3/039301
Specific activity of primordial radionuclides and associated radiation hazards due to 40K, 226Ra, and 232Th have been measured in backed red brick samples, collected from five highly populated areas of the North West Frontier Province of Pakistan. For the detection, analysis and data acquisition, a high purity germanium detector was used. Associated external doses were calculated using a Monte Carlo neutron photon transport code. A theoretical model to determine the gamma dose rate at 1 m height from the floor, made of bricks, was employed for the calculation of mass attenuation coefficient and self-absorption in the floor for the gamma energies of these radionuclides and their progeny. Monte Carlo simulation shows that in this study the floor, having more than an effective thickness of 15 cm, contributes very little to the external gamma dose rate. The values of the external dose rate and annual effective dose are found to be much lower than the world average as well as from other countries of the world.
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90 articles
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