CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory |
LV Shi-Long1, SONG Zhi-Tang1, LIU Yan1,2, FENG Song-Lin1 |
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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Cite this article: |
LV Shi-Long, SONG Zhi-Tang, LIU Yan et al 2010 Chin. Phys. Lett. 27 028401 |
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Abstract Phase change random access memory (PC-RAM) based on Si2Sb2Te5 with a Pt tapered heating electrode (Pt-THE), which is fabricated using a focus ion beam (FIB), is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
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Keywords:
84.37.+q
85.30.De
85.40.Hp
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Received: 26 October 2009
Published: 08 February 2010
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PACS: |
84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.40.Hp
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(Lithography, masks and pattern transfer)
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