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Universal Quantum Cloning Machine in Circuit Quantum Electrodynamics
LV Dan-Dan, LU Hong, YU Ya-Fei, FENG Xun-Li, ZHANG Zhi-Ming,
Chin. Phys. Lett. 2010, 27 (2):
020302
.
DOI: 10.1088/0256-307X/27/2/020302
We propose a scheme for realizing the 1→2 universal quantum cloning machine (UQCM) with superconducting quantum interference device (SQUID) qubits in circuit quantum electrodynamics (circuit QED). In this scheme, in order to implement UQCM, we only need phase shift gate operation on SQUID qubits and the Raman transitions. The cavity number we need is only one. Thus our scheme is simple and has advantages in the experimental realization. Furthermore, both the cavity and the SQUID qubits are virtually excited, so the decoherence can be neglected.
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Analysis of Chaotic Dynamics in a Two-Dimensional Sine Square Map
XU Jie, LONG Ke-Ping, FOURNIER-PRUNARET Dani`ele, TAHA Abdel-Kaddous, CHARGE Pascal
Chin. Phys. Lett. 2010, 27 (2):
020504
.
DOI: 10.1088/0256-307X/27/2/020504
We study an N-dimensional system based upon a sine map, which is related to the simplified model of an opto-electronic system. The system behavior is analyzed with the tools of nonlinear dynamics (bifurcations in the parameter plane, critical manifolds, basins of attraction, chaotic attractors). Our study relies on a two-dimensional system (N=2). It is interesting that this system shows the existence of bounded chaotic orbits, which can be considered for secure transmissions.
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Spectrum Analysis and Circuit Implementation of a New 3D Chaotic System with Novel Chaotic Attractors
DONG Gao-Gao, ZHENG Song, TIAN Li-Xin, DU Rui-Jin,
Chin. Phys. Lett. 2010, 27 (2):
020507
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DOI: 10.1088/0256-307X/27/2/020507
The new autonomous system with only three equilibrium points is introduced. This system does not belong to the generalized Lorenz systems. The novel attractors are observed over a large range of parameters, which have rarely been reported in previous work. As an important component in chaotic signal generators, a physical circuit has been designed. The experimental results are in agreement with numerical simulations. More significantly, spectral analysis shows that the system has an extremely broad frequency spectral bandwidth in 0-131.6 Hz, without investigating any possible electronic techniques, which is more desirable for secure communications.
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Lifetimes of High Spin States in an Odd-Proton Nucleus 129Cs
WANG Lie-Lin, ZHU Li-Hua, LU Jing-Bin, WU Xiao-Guang, LI Guang-Sheng, HAO Xin, ZHENG Yun, HE Chuang-Ye, WANG Lei, LI Xue-Qin, LIU Ying, PAN Bo, ZHAO Yan-Xin, LI Zhong-Yu, DING Huai-Bo
Chin. Phys. Lett. 2010, 27 (2):
022101
.
DOI: 10.1088/0256-307X/27/2/022101
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Nuclear Structure and Magnetic Moment of the Unstable 12B-12N Mirror Pair
ZHENG Yong-Nan, ZHOU Dong-Mei, YUAN Da-Qing, ZUO Yi, FAN Ping, M. Mihara, K. Matsuta, M. Fukuda, T. Minamisono, T. Suzuki, XU Yong-Jun, ZHU Jia-Zheng, WANG Zhi-Qiang, LUO Hai-Long, ZHANG Xi-Zhen, ZHU Sheng-Yun
Chin. Phys. Lett. 2010, 27 (2):
022102
.
DOI: 10.1088/0256-307X/27/2/022102
Magnetic moments of the A=12 unstable mirror pair nuclides 12B and 12N have been measured by the β-NMR technique. The experimentally measured magnetic moments are μ(12B)=1.001(17)μN and μ(12N)=0.4571(1)μN. The improved shell model using an SFO Hamiltonian with enhanced spin-isospin monopole proton-neutron interaction and modified single-particle energies is employed to calculate the magnetic moments of 12B and 12N. The calculation yields μ (12B)=0.929μN and μ(12N)=0.452μN and has produced a new magic number 6 for the short-lived unstable mirror pair nuclides 12B and 12N.
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Observation of a Possible New Isomer in 175Ir
WANG Hua-Lei, SONG Li-Tao, ZHAO Wei-Juan, LIU Zhong-Xia, ZHANG Yu-Hu, ZHOU Xiao-Hong, GUO Ying-Xiang, LEI Xiang-Guo
Chin. Phys. Lett. 2010, 27 (2):
022301
.
DOI: 10.1088/0256-307X/27/2/022301
The neutron deficient nuclide 175Ir was produced by irradiation of 146Nd with 210 MeV 35Cl via a fusion-evaporation reaction channel. The reaction products were transported to a low-background location using a helium-jet recoil fast-moving tape-transport system for measurement. The experimental devices and data analysis method are introduced. Based on the decay-curve fitting of the β-delayed γ ray from 175Ir, realized by the least-square method, a new long-lived isomeric state of 175Ir is proposed and briefly discussed.
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High Efficiency Multi-kW Diode-Side-Pumped Nd:YAG Laser with Reduced Thermal Effect
XU Yi-Ting, XU Jia-Lin, CUI Qian-Jin, XIE Shi-Yong, LU Yuan-Fu, BO Yong, PENG Qin-Jun, CUI Da-Fu, XU Zu-Yan
Chin. Phys. Lett. 2010, 27 (2):
024201
.
DOI: 10.1088/0256-307X/27/2/024201
We demonstrate a high efficiency multi-kW diode-side-pumped Nd:YAG laser. High cooling efficiency of the diode-side-pumped module in the laser is achieved. The middle portion of the Nd:YAG rod in the module is cooled by a coolant jet with screwed side surface, and the end-caps of the rod without screwed side surface are cooled by Au coated on the surface. The thermal effect of the laser rod is reduced, which leads to high output power with high optical-optical conversion efficiency. By using three identical Nd:YAG laser modules, an output power of 4.2 kW and beam quality of 58 mm12539;mrad with an optical-optical efficiency of 35% at 1064 nm is obtained in a laser oscillator. By using four identical Nd:YAG laser modules, an output power of 3.1 kW and beam quality of 17 mm12539;mrad with an optical-optical efficiency of 25.8% is demonstrated in a master oscillator power-amplifier system.
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Characterizations of Stress and Strain Variation in Three-Dimensional Forming of Laser Micro-Manufacturing
ZHOU Ming, ZHAO Guo-Huan, HUANG Tao, DING Hua, CAI Lan
Chin. Phys. Lett. 2010, 27 (2):
024202
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DOI: 10.1088/0256-307X/27/2/024202
A micro-manufacturing technology is presented to form three-dimensional metallic micro-structures directly. Micro grid array structures are replicated on a metallic foil surface, with high spatial resolution in micron levels. The numerical simulation results indicate that the material deformation process is characterized by an ultrahigh strain rate. With increasing pulse duration, the sample absorption strain energy increases, and the sample deformation degree enlarges. The stress state of the central point fluctuates between tensile stress and compression stress. The stress state of the angular point is altered from compressive stress to tensile stress due to geometry and loading conditions. The duration length of pulse stress has an effect on the stress state, as with the increase of pulse duration, fluctuation in the stress state decreases. Therefore, laser micro-manufacturing technology will be a potential laser micro forming method which is characterized by low cost and high efficiency.
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An Efficient Pulsed CH3OH Terahertz Laser Pumped by a TEA CO2 Laser
JIU Zhi-Xian, ZUO Du-Luo, MIAO Liang, QI Chun-Chao, CHENG Zu-Hai
Chin. Phys. Lett. 2010, 27 (2):
024211
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DOI: 10.1088/0256-307X/27/2/024211
An efficient pulsed CH3OH terahertz (THz) laser pumped by a TEA CO2 laser is investigated experimentally. To improve photon conversion efficiency and THz laser energy, two cavity configurations of the TEA CO2 laser, which is external and semi-external, are evaluated. The pump intensities are about 4.7 MW/cm2 and 1.2 MW/cm2, respectively. Higher pump intensity and more stable single lines are obtained in the external cavity. For the 3.8 J pump energy of the 9P(16) transition in the external cavity, the maximum terahertz output energy with 570.5 μm wavelength at 160 Pa is 431 μJ. With a 6 J energy pulse in terms of a semi-external cavity, a 353 μJ terahertz emission (570.5 μm) is produced. The corresponding photon conversion efficiencies are 1.36% and 0.705%, increasing by a factor of about 2.
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Effect of Air Gap on Dual-Tripler Broadband Third-Harmonic Generation
HAN Wei, WANG Fang, WANG Li-Quan, JIA Huai-Ting, WANG Wei, LI Fu-Quan, FENG Bin, XIANG Yong, LI Ke-Yu, ZHONG Wei
Chin. Phys. Lett. 2010, 27 (2):
024216
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DOI: 10.1088/0256-307X/27/2/024216
We experimentally study the effect of the air gap on conversion efficiency and the spectrum of generated third-harmonic pulses in the dual-tripler broadband third-harmonic generation scheme. The experimental results are in good agreement with predictions that the 4-cm air gap is equivalent to a full cycle of phase mismatch among the three interacting pulses (i.e. the fundamental, second-harmonic and third-harmonic pulse). The experimental results also show that the spectrum of the third-harmonic pulse is sensitive to the air gap. We also point out that the air gap effect can be ignored when the dual-tripler system is located in 1000 Pa atmosphere. These results will guide the design of the broadband third-harmonic generation system in high power lasers.
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Mechanical Properties and Anisotropy in PbWO4 Single Crystal
WANG Hong, , ZHANG Zhi-Jun, ZHAO Jing-Tai, XU Jia-Yue, HU Guan-Qin, LI Pei-Jun
Chin. Phys. Lett. 2010, 27 (2):
026101
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DOI: 10.1088/0256-307X/27/2/026101
The mechanical properties of PbWO4 (PWO) crystals grown by the vertical Bridgman method are systematically investigated using the microindentation technique. In the present work, the Vickers microhardness Hν, fracture toughness Kc, yield strength σy and friability index Bi of PbWO4 crystals are measured. The Vickers microhardness Hν on the (100) wafer is about 140 MPa, which means that PWO is a little ``soft'' scintillator. The anisotropy of mechanical properties is also investigated under a steady load of 0.5 kg. The (100) wafer of the crystal exhibits combined mechanical properties more excellent than those of (111) and (001) wafers, and the values of Kc, σy, and Bi are 0.538 MPa12539;m1/2, 51.11 kg/mm2 and 284.96 νm-1/2, respectively.
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Superconducting State Parameters of NbxTayMoz Superconductors
Aditya M. Vora
Chin. Phys. Lett. 2010, 27 (2):
026102
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DOI: 10.1088/0256-307X/27/2/026102
We present screening dependence theoretical investigations of the superconducting state parameters, i.e. electron-phonon coupling strength λ, Coulomb pseudopotential μ*, transition temperature TC, isotope effect exponent α, and effective interaction strength N0V, of some BMG superconductors, namely Nb0.45Ta0.45Mo0.10, Nb0.30Ta0.40Mo0.30, Nb0.40Ta0.30Mo0.30, Nb0.30Ta0.30Mo0.40 and Nb0.15Ta0.15Mo0.70 by employing the well-known empty core model potential of Ashcroft for the first time. Five local field correction functions proposed by Hartree, Taylor, Ichimaru-Utsumi, Farid et al. and Sarkar et al. are used in the present investigation to study the screening influence on the aforesaid superconducting properties. The transition temperature TC obtained from the H-local field correction function is found to be in an excellent agreement with the available theoretical data. Also, the present results are found to be in qualitative agreement with other such earlier reported data, which confirms the superconducting phase in the superconductors.
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Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)
WU Rui, WANG Li-Li, ZHANG Yi, MA Xu-Cun, JIA Jin-Feng, XUE Qi-Kun,
Chin. Phys. Lett. 2010, 27 (2):
026802
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DOI: 10.1088/0256-307X/27/2/026802
Two Ge-induced incommensurate phases, γ and β, on Si(111) are observed and studied by {\it in situ} scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si(111)-1×1 surface. The β phase consists of two kinds of triangular domains whose stacking sequences are faulted and unfaulted with respect to the Si(111)-1×1 surface, respectively. In the β phase, two types of domain walls, ``zigzag'' and ``face-to-face'', form to release the strain. The triangular domains all exhibit a quasi-1×1 hexagonal close-packed structure. By studying the structural evolution from magic clusters to incommensurate structures, the structure models for γ and β phases are proposed.
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Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering
GAO Xiao-Yong, FENG Hong-Liang, ZHANG Zeng-Yuan, MA Jiao-Min, LU Jing-Xiao
Chin. Phys. Lett. 2010, 27 (2):
026804
.
DOI: 10.1088/0256-307X/27/2/026804
(111) preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.
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Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field
YANG Ling, MA Jing-Jing, ZHU Cheng, HAO Yue, MA Xiao-Hua
Chin. Phys. Lett. 2010, 27 (2):
027102
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DOI: 10.1088/0256-307X/27/2/027102
The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance RGate, channel resistance R channel, gate current IG,off at VGS=-5 and VDS=0.1 V, and drain current ID,max at VGS=2 and VDS=5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.
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Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition
YANG Chun-Xiao, ZHANG Chi, SUN Qing-Qing, XU Sai-Sheng, ZHANG Li-Feng, SHI Yu, DING Shi-Jin, ZHANG Wei
Chin. Phys. Lett. 2010, 27 (2):
027701
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DOI: 10.1088/0256-307X/27/2/027701
An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k (i.e., 1.94 at 1 MHz), smaller leakage current density (2.96×10-7 A/cm2 at 1 MV/cm) and higher breakdown field strength (about 3.5 MV/cm), which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.
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Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films
LIU Wen-Ting, LIU Zheng-Tang, TAN Ting-Ting, YAN Feng
Chin. Phys. Lett. 2010, 27 (2):
027703
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DOI: 10.1088/0256-307X/27/2/027703
Hafnium dioxide (HfO2) thin films are prepared by rf magnetron sputtering. The influences of rf power on the structure, chemical states and electrical properties of the thin films were investigated through x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage and leakage current density-voltage measurement and UV-VIS spectrophotometry. The results show that the HfO2 thin films have a mixed structure of amorphous and polycrystalline phases. With increasing rf power, the crystallinity is enhanced and the crystallite size of the thin films is increased. The oxidation of Hf atoms is improved with increasing rf power for the HfO2 thin films. The flat band shift, oxide charge density and leakage current density of the thin films all decrease as the rf power increases from 50 to 110 W, and then increase as the rf power is increased to 140 W. The band gap energy is smaller for the thin film deposited at 110 W.
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Effects of Substitution of Sm for Bi in BiFeO3 Thin Films Prepared by the Sol-Gel Method
HUANG Ning-Xiang, ZHAO Li-Feng, XU Jia-Yang, CHEN Ji-Li, ZHAO Yong,
Chin. Phys. Lett. 2010, 27 (2):
027704
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DOI: 10.1088/0256-307X/27/2/027704
Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si(100) substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.
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CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun
Chin. Phys. Lett. 2010, 27 (2):
028101
.
DOI: 10.1088/0256-307X/27/2/028101
The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 (CIS) films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu(In,Ga)Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.
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Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory
LV Shi-Long, SONG Zhi-Tang, LIU Yan, FENG Song-Lin
Chin. Phys. Lett. 2010, 27 (2):
028401
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DOI: 10.1088/0256-307X/27/2/028401
Phase change random access memory (PC-RAM) based on Si2Sb2Te5 with a Pt tapered heating electrode (Pt-THE), which is fabricated using a focus ion beam (FIB), is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
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93 articles
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