CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures |
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun
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Institute of Photo-electronic Thin Film Devices and Technology, and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 |
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Cite this article: |
YU Tao, ZHANG Yi, LI Bao-Zhang et al 2010 Chin. Phys. Lett. 27 028101 |
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Abstract The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 (CIS) films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu(In,Ga)Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.
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Keywords:
81.15.Ef
68.55.Jk
84.60.Jt
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Received: 04 November 2009
Published: 08 February 2010
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