| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Schottky Barrier Formation at a Carbon Nanotube-Scandium Junction |
| HE Yu, ZHANG Ming, ZHANG Jin-Yu, WANG Yan, YU Zhi-Ping |
| Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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HE Yu, ZHANG Ming, ZHANG Jin-Yu et al 2009 Chin. Phys. Lett. 26 027302 |
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Abstract Recent experiment shows that scandium (Sc) can make a good performance contact with carbon nanotubes (CNTs) to fabricate n-type field effect transistor (n-FET). We study the Schottky barrier (SB) of scandium (Sc) and palladium (Pd) with a (8,0) single-wall CNT (SWCNT) using first-principles calculation. It is found that the p-type SB height (SBH) of the Pd--CNT contact is about 0.34eV, which is in good agreement with the experimental data. For the Sc-CNT contact, an n-type contact is formed and the SBH is about 0.08eV in agreement with the experimental observations. Our calculation demonstrates that by contacting CNT with Pd and Sc, p-FET and n-FET can be fabricated, respectively. The dipole effect at the interface is used to explain our result
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| Keywords:
73.40.Sx
73.63.Fg
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Received: 04 July 2008
Published: 20 January 2009
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