CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide Heterostructures |
HAN Peng1,2, JIN Kui-Juan1, LÜ Hui-Bin1, JIA Jin-Feng2 , QIU Jie1, HU Chun-Lian1, YANG Guo-Zhen1 |
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Department of Physics, Tsinghua University, Beijing 100084 |
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Cite this article: |
HAN Peng, JIN Kui-Juan, LÜ et al 2009 Chin. Phys. Lett. 26 027301 |
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Abstract Effect of oxygen vacancy on transport property of perovskite microstructures is studied theoretically. Compared with calculated and measured I-V curves, it is revealed that electron conduction plays an important role in the oxygen nonstoichiometry perovskite heterostructures even with hole-doped or un-doped material due to the oxygen vacancies. In addition, a detailed understanding of the influence of oxygen vacancy concentration and temperature on the conduction characteristics of oxide heterojunction with both forward and reverse biases is obtained by calculation.
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Keywords:
73.40.Lq
73.20.Hb
73.50.Gr
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Received: 22 October 2008
Published: 20 January 2009
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PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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[1] Tanaka H et al 2002 Phys. Rev. Lett. 88 027204 Mitra C et al 2003 Phys. Rev. Lett. 90 017202 [2] Lu H B et al 2005 Appl. Phys. Lett. 86 032502 Jin K J et al 2005 Phys. Rev. B 71 184428 [3] Hunter D et al 2006 Appl. Phys. Lett. 89092102 [4] De Teresa J M et al 1999 Phys. Rev. Lett. 824288 O'Donnell J et al 2000 Appl. Phys. Lett. 761914 Alldredge L M B et al 2006 Appl. Phys. Lett. 89 182504 [5] Newns D M et al 1998 Appl. Phys. Lett. 73780 [6] Zhou Q L et al 2005 Europhys. Lett. 71 283 [7] Han P et al 2007 Appl. Phys. Lett. 91 182102 Han P and Jia J F 2008 Phys. Lett. A 372 4943 [8] Qiu J et al 2007 Europhys. Lett. 79 57004 [9] Sun J R et al 2004 Appl. Phys. Lett. 84 4804 Li G et al 2007 Appl. Phys. Lett. 91 163114 [10] Xiong C M et al 2007 Appl. Phys. Lett. 91053510 [11] Picozzi S et al 2007 Phys. Rev. B 75 094418 [12] Sterne P A and Wang C S 1988 Phys. Rev. B 377422 [13] Hossain F M et al 2007 Solid State Ionics 178 319 [14] Selme M O and Pecheur P 1983 J. Phys. C 162559 [15] Moos R et al 1995 Appl. Phys. A 61 389 [16] Lankhorst M H R et al 1996 Phys. Rev. Lett. 77 2989 [17] Sogaard M et al 2006 Solid State Ionics 1773285 [18] Horio K et al 1990 IEEE Trans. Electron. Devices 37 1093 Han P et al 2006 J. Appl. Phys. 99 074504 [19] Neamen D A 2003 Semiconductor Physics and DevicesBasic Principles 3rd edn (New York: McGraw-Hill) |
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