Chin. Phys. Lett.  2009, Vol. 26 Issue (2): 027301    DOI: 10.1088/0256-307X/26/2/027301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide Heterostructures
HAN Peng1,2, JIN Kui-Juan1, LÜ Hui-Bin1, JIA Jin-Feng2 , QIU Jie1, HU Chun-Lian1, YANG Guo-Zhen1
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Department of Physics, Tsinghua University, Beijing 100084
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HAN Peng, JIN Kui-Juan, LÜ et al  2009 Chin. Phys. Lett. 26 027301
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Abstract Effect of oxygen vacancy on transport property of perovskite microstructures is studied theoretically. Compared with calculated and measured I-V curves, it is revealed that electron conduction plays an important role in the oxygen nonstoichiometry perovskite heterostructures even with hole-doped or un-doped material due to the oxygen vacancies. In addition, a detailed understanding of the influence of oxygen vacancy concentration and temperature on the conduction characteristics of oxide heterojunction with both forward and reverse biases is obtained by calculation.
Keywords: 73.40.Lq      73.20.Hb      73.50.Gr     
Received: 22 October 2008      Published: 20 January 2009
PACS:  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.20.Hb (Impurity and defect levels; energy states of adsorbed species)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/2/027301       OR      https://cpl.iphy.ac.cn/Y2009/V26/I2/027301
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HAN Peng
JIN Kui-Juan
Hui-Bin
JIA Jin-Feng
QIU Jie
HU Chun-Lian
YANG Guo-Zhen
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