| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Electrically Driven InAs Quantum-Dot Single-Photon Sources |
| XIONG Yong-Hua, NIU Zhi-Chuan, DOU Xiu-Ming, SUN Bao-Quan, HUANG She-Song, NI Hai-Qiao, DU Yun, XIA Jian-Bai |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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XIONG Yong-Hua, NIU Zhi-Chuan, DOU Xiu-Ming et al 2009 Chin. Phys. Lett. 26 026802 |
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Abstract Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K
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| Keywords:
68.65.+g
78.66.Fd
81.05.Ea
81.15.Hi
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Received: 08 July 2008
Published: 20 January 2009
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