| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Cu(In, Ga)Se2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition |
| ZHANG Li, HE Qing, JIANG Wei-Long, LI Chang-Jian, SUN Yun |
| The Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 |
|
| Cite this article: |
|
ZHANG Li, HE Qing, JIANG Wei-Long et al 2009 Chin. Phys. Lett. 26 026801 |
|
|
|
|
Abstract The structural and electrical properties of Cu(In,Ga)Se2 (CIGS) films grown on polyimide (PI) sheet using the three-stage co-evaporation process are investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM), Raman spectra, and Hall effect measurements, respectively. The results show that the properties of CIGS films on PI sheet are strongly dependent on the compositional ratio of Cu/(In+Ga) (Cu/III). In contrast to the non-stoichiometric CIGS films, stoichiometric CIGS films show better structural and electrical properties, such as a relatively larger grain size, lower resistivity and higher carrier concentration. The flexible CIGS solar cells on PI sheet with the conversion efficiencies of 9.7% and 6.6% are demonstrated for the CIGS absorber layer with CuIII of 0.96 and 0.76, respectively (active area, 0.20cm2). The cell efficiency for Cu-poor CIGS films is limited by a relatively lower open circuit voltage and fill factor.
|
| Keywords:
68.55.J-
73.61.-r
84.60.Jt
81.05.Bx
|
|
|
Received: 09 September 2008
Published: 20 January 2009
|
|
| PACS: |
68.55.J-
|
(Morphology of films)
|
| |
73.61.-r
|
(Electrical properties of specific thin films)
|
| |
84.60.Jt
|
(Photoelectric conversion)
|
| |
81.05.Bx
|
(Metals, semimetals, and alloys)
|
|
|
|
|
|
[1] Repins I, Contreras M A, Egaas B, DeHart Clay, Scharf J,Perkins C L, To B and Noufi R 2008 Prog. Photovolt: Res. Appl. 16 235
[2] Tiwari A N, Krejci M, Haug F J and Zogg H 1999 Prog.Photovolt: Res. Appl. 7 393
[3] Br\'{emaud D, Rudmann D, Bilger G, Zogg H and Tiwari A N2005 Proc. IEEE Photovoltaic Specialists Conference (Florida,USA 3--7 January 2005) p 223
[4] Birkmire R, Eser E, Fields S and Shafarman W 2005 Prog. Photovolt: Res. Appl. 13 141
[5] Kessler F, Herrmann D and Powalla M 2005 Thin SolidFilms 480-481 491
[6] Kessler F and Rudmann D 2004 Solar Energy 77685
[7] Rudmann D, Cunha A F da, Kaelin M, Kurdesau F, Zogg H andTiwari A N 2004 Appl. Phys. Lett. 84 1129
[8] Noufi R, Axton R, Herrington C and Deb S K 1984 Appl.Phys. Lett. 45 668
[9] Arndt W, Dittrich H and Schock H W 1985 Thin SolidFilms 130 209
[10] Hanna G, Jasenek A, Rau U and Schock H W 2000 Phys.Status Solidi A 179 R7
[11] Zhang L, He Q, Jiang W L, Liu F F, Li Ch J and Sun Y 2008 Chin. Phys. Lett. 25 3452
[12] Menezes S, Kessler J, Schmid D, Shock H W, Nelson A andMatson R J 1994 Proc. the First WCPEC (Hawaii, USA 5--9December 1994) p 361
[13] Wada T, Kohara N, Negami T and Nishitani M 1997 J.Mater. Res. 12 1456
[14] Zhang L, He Q, Xu C M Xue Y M, Li C J and Sun Y 2008 Chin. Phys. B 17 3138
[15] Park J S, Dong Z, Kim S and Perepezko J H 2000 J.Appl. Phys. 87 3683
[16] {\AArd M B, Granath K and Stolt L 2000 Thin SolidFilms 361-362 9
[17] Yamada A, Miyazaki H, Miyake T, Chiba Y and Konagai M2006 Proc. IEEE Photovoltaic Specialists Conference (Hawaii,USA 7--12 May 2006) p 343
[18] Pauw L J 1958 Philips Res. Rep. 13 1
[19] Nishiwaki S, Satoh T, Hayashi S, Hashimoto Y, Negami Tand Wada T 1999 J. Mater. Res. 14 4514 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
