Tunneling Processes in Optically Excited Quantum Dots
LI Xiu-Ping1, WEI Hua-Rong1, XU Li-Ping2, GONG Jian-Ping3, YAN Wei-Xian1
1College of Physics and Electronics, Shanxi University, Taiyuan 030006 2Department of Physics, North University of China, Taiyuan 030051 3Department of Physics, Jinzhong University, Yuci 030600
Tunneling Processes in Optically Excited Quantum Dots
LI Xiu-Ping1, WEI Hua-Rong1, XU Li-Ping2, GONG Jian-Ping3, YAN Wei-Xian1
1College of Physics and Electronics, Shanxi University, Taiyuan 030006 2Department of Physics, North University of China, Taiyuan 030051 3Department of Physics, Jinzhong University, Yuci 030600
摘要The single-electron tunneling processes in optically excited coupled quantum dots can be divided into two parts: the electron and the hole parts, which are analytically obtained in the framework of the Keldysh formalism. The tunneling process is selective tunneling, which results in dark tunneling states. The tunneling currents are co-determined by the resonance energies and probability distributions of the particular quantum channels defined by the electron-hole complex resonant states.
Abstract：The single-electron tunneling processes in optically excited coupled quantum dots can be divided into two parts: the electron and the hole parts, which are analytically obtained in the framework of the Keldysh formalism. The tunneling process is selective tunneling, which results in dark tunneling states. The tunneling currents are co-determined by the resonance energies and probability distributions of the particular quantum channels defined by the electron-hole complex resonant states.
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2011, Vol. 28 
