摘要We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory.
Abstract：We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory.
[1] Dagkaldiran Ü, Gordijn A, Finger F, Yates H M, Evans P, Sheel D W, Remes Z and Vanecek M 2009 Mater. Sci. Engin. B 159-160 6
[2] Lai K C, Liu C C, Lu C H, Yeh C H and Houng M P 2010 Sol. Energy Mater. Sol. Cells 94 397
[3] Lee B J, Kim H J, Jeong W I and Kim J J 2010 Sol. Energy Mater. Sol. Cells 94 542
[4] Chen M C, Chang T C, Huang S Y, Chang K C and Chun H 2009 Surf. Coat. Technol. 204 1112
[5] Henriquez R, Grez P, Munoz E, Gomez H, Badan J A, Marotti R E and Dalchiele E A 2010 Thin Solid Films 518 1774
[6] Maldonado A, Guerra S T, Cázares J M and Olvera M D 2010 Thin Solid Films 518 1815
[7] Kul M, Zor M, Aybek A S, Irmak S and Turan E 2007 Thin Solid Films 515 8590
[8] Ali H M, Mohamed H A, Wakkad M M and Hasaneen M F 2007 Thin Solid Films 515 3024
[9] Santos-Cruz J, Torres-Delgado G, Castanedo-Perez R, Zúñiga-Romero C I and Zelaya-Angel O 2007 Thin Solid Films 515 5381
[10] Dakhel A A 2008 Thin Solid Films 517 886
[11] Dakhel A A 2009 Mater. Chem. Phys. 117 284
[12] Zhou Y, Kelly PJ, Postill A, Abu-Zeid O and Alnajjar A A 2004 Thin Solid Films 447-448 33
[13] Zhou Y, Kelly P J 2004 Thin Solid Films 469-470 18
[14] Kelly P J, Zhou Y 2006 J. Vac. Sci. Technol. A 24 1782
[15] Santos-Cruz J, Torres-Delgado G, Castanedo-Perez R, Zúñiga-Romero C I and Zelaya-Angel O 2005 Thin Solid Films 493 83
[16] Zhou Q, Ji Z G, Hu B B, Chen C, Zhao L and Wang C 2007 Mater. Lett. 61 531
[17] Saha B, Thapa R and Chattopadhyay K K 2008 Sol. Energy Mater. Sol. Cells 92 1077
[18] Ueda N, Maeda H, Hosono H and Kawazoe H 1998 J. Appl. Phys. 84 6174
[19] Liu E K, Zhu B S and Luo J S 2008 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) pp 19 75 97 319 (in Chinese)
2011, Vol. 28 
