Room-Temperature Multi-Peak NDR in nc-Si Quantum-Dot Stacking MOS Structures for Multiple Value Memory and Logic
QIAN Xin-Ye, CHEN Kun-Ji** , HUANG Jian, WANG Yue-Fei, FANG Zhong-Hui, XU Jun, HUANG Xin-Fan
State Key Laboratory of Solid State Microstructures, Jiangsu Province Key Laboratory of Photonic and Electronic Material Science and Technology, School of Electron Science and Engineering, Nanjing University, Nanjing 210093
Abstract ：Room-temperature negative differential resistance (NDR) characteristics are observed in a nanocrystalline Si quantum dot (nc-Si QD) floating-gate MOS structure, which is fabricated by plasma-enhanced chemical vapor deposition. Clear multi-NDR peaks for the electrons and holes, shown in the I –V curves, which are significant for the application of multiple value memory and logic, are proved to be induced by electron and hole resonant tunneling into the nc-Si QDs from the substrate. The calculation results indicate that these NDR characteristics should be associated with the Coulomb blockade effect and the quantum confinement effect of the nc-Si QDs. Furthermore, low-temperature I –V characteristics are also investigated to confirm the room-temperature results.
收稿日期: 2013-04-12
出版日期: 2013-11-21
引用本文:
. [J]. 中国物理快报, 2013, 30(7): 77303-077303.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/7/077303
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I7/77303
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2013, Vol. 30 
