Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO2 Multilayers at Room Temperature
SUN Hong-Cheng, XU Jun**, LIU Yu, MU Wei-Wei, XU Wei, LI Wei, CHEN Kun-Ji
Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO2 Multilayers at Room Temperature
SUN Hong-Cheng, XU Jun**, LIU Yu, MU Wei-Wei, XU Wei, LI Wei, CHEN Kun-Ji
Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
摘要Phosphorous-doped hydrogenated amorphous Si/SiO2 multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system. The microstructural and luminescence properties of the samples are characterized after annealing at various temperatures. Under the onset crystallization temperature 800–900 °C, a strong subband infrared light emission in the range 1.1–1.8 μm is observed at room temperature instead of the usually observed visible light emission. This subband infrared emission is gradually enhanced with the increase of phosphorus doping concentration, which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms.
Abstract：Phosphorous-doped hydrogenated amorphous Si/SiO2 multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system. The microstructural and luminescence properties of the samples are characterized after annealing at various temperatures. Under the onset crystallization temperature 800–900 °C, a strong subband infrared light emission in the range 1.1–1.8 μm is observed at room temperature instead of the usually observed visible light emission. This subband infrared emission is gradually enhanced with the increase of phosphorus doping concentration, which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms.
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2011, Vol. 28 
