| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes |
| PAN Yao-Bo1,2, HAO Mao-Sheng3, QI Sheng-Li1, FANG Hao1, ZHANG Guo-Yi1 |
| 1School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871 2Epilight Technology Co., Ltd., Shanghai 201210 3Technology Center for IRICO Group Corporation, Beijing 100085 |
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| Cite this article: |
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PAN Yao-Bo, HAO Mao-Sheng, QI Sheng-Li et al 2010 Chin. Phys. Lett. 27 038503 |
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Abstract We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 µm and the depth is around 0.1 µm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.
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| Keywords:
85.60.Jb
81.15.Gh
71.55.Eq
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Received: 13 November 2009
Published: 09 March 2010
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| PACS: |
85.60.Jb
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(Light-emitting devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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71.55.Eq
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(III-V semiconductors)
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