| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Planar Hall Effect in the Charge-Density-Wave Bi$_{2}$Rh$_{3}$Se$_{2}$ |
| Mingju Cai1, Zheng Chen2, Yang Yang2, Xiangde Zhu2, Haoxiang Sun3, Ankang Zhu4*, Xue Liu1, Yuyan Han2*, Wenshuai Gao1*, and Mingliang Tian2,5 |
1Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
2Anhui Key Laboratory of Low-energy Quantum Materials and Devices, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
3Stony Brook Institute at Anhui University, Anhui University, Hefei 230601, China
4School of Mathematics and Physics, Bengbu University, Bengbu 233030, China
5School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
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| Cite this article: |
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Mingju Cai, Zheng Chen, Yang Yang et al 2024 Chin. Phys. Lett. 41 077303 |
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Abstract We systematically investigate in-plane transport properties of ternary chalcogenide Bi$_{2}$Rh$_{3}$Se$_{2}$. Upon rotating the magnetic field within the plane of the sample, one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance, and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect (PHE). In addition, anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi$_{2}$Rh$_{3}$Se$_{2}$. The finding not only provides another platform for understanding the mechanism of PHE, but could also be beneficial for future planar Hall sensors based on two-dimensional materials.
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Received: 09 April 2024
Published: 24 July 2024
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| PACS: |
73.43.Qt
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(Magnetoresistance)
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71.20.Be
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(Transition metals and alloys)
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71.45.Lr
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(Charge-density-wave systems)
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72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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