| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Layer-Valley Hall Effect under Inversion and Time-Reversal Symmetries |
| Jiaojiao Zhao1,2, Gui-Bin Liu3,4*, Peng Chen5, Yugui Yao3,4, Guangyu Zhang1,2,6, and Luojun Du1,2* |
1Beijing National Laboratory for Condensed Matter Physics, and Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
3Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
4Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
5Schoolof Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
6Songshan Lake Materials Laboratory, Dongguan 523808, China
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| Cite this article: |
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Jiaojiao Zhao, Gui-Bin Liu, Peng Chen et al 2024 Chin. Phys. Lett. 41 066801 |
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Abstract Hall effects have been the central paradigms in modern physics, materials science and practical applications, and have led to many exciting breakthroughs, including the discovery of topological Chern invariants and the revolution of metrological resistance standard. To date, the Hall effects have mainly focused on a single degree of freedom (DoF), and most of them require the breaking of spatial-inversion and/or time-reversal symmetries. Here we demonstrate a new type of Hall effect, i.e., layer-valley Hall effect, based on a combined layer-valley DoF characterized by the product of layer and valley indices. The layer-valley Hall effect has a quantum origin arising from the layer-valley contrasting Berry curvature, and can occur in nonmagnetic centrosymmetric crystals with both spatial-inversion and time-reversal symmetries, transcending the symmetry constraints of single DoF Hall effect based on the constituent layer or valley index. Moreover, the layer-valley Hall effect is highly tunable and shows a W-shaped pattern in response to the out-of-plane electric fields. Additionally, we discuss the potential detection approaches and material-specific design principles of layer-valley Hall effect. Our results demonstrate novel Hall physics and open up exotic paradigms for new research direction of layer-valleytronics that exploits the quantum nature of the coupled layer-valley DoF.
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Received: 28 March 2024
Published: 20 June 2024
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