| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magnetoresistance and Kondo Effect in Nodal-Line Semimetal VAs$_2$ |
| Shuijin Chen1, Zhefeng Lou1, Yuxing Zhou1, Qin Chen1, Binjie Xu1, Chunxiang Wu1, Jianhua Du2, Jinhu Yang3, Hangdong Wang3, and Minghu Fang1,4* |
1Department of Physics, Zhejiang University, Hangzhou 310027, China
2Department of Applied Physics, China Jiliang University, Hangzhou 310018, China
3Department of Physics, Hangzhou Normal University, Hangzhou 310036, China
4Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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| Cite this article: |
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Shuijin Chen, Zhefeng Lou, Yuxing Zhou et al 2021 Chin. Phys. Lett. 38 017202 |
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Abstract We performed calculations of the electronic band structure and the Fermi surface, measured the longitudinal resistivity $\rho_{xx}(T,H)$, Hall resistivity $\rho_{xy}(T,H)$, and magnetic susceptibility as a function of temperature at various magnetic fields for VAs$_2$ with a monoclinic crystal structure. The band structure calculations show that VAs$_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in $\rho_{xx}(T)$ measured at $H = 0$ demonstrates that some additional magnetic impurities (V$^{4+}$, $S = 1/2$) exist in VAs$_2$ single crystals, inducing Kondo scattering, evidenced by both the fitting of $\rho_{xx}(T)$ data and the susceptibility measurements. It is found that a large positive magnetoresistance (MR) reaching 649% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of $\rho_{xx}(T)$ also emerge in VAs$_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrivial/trivial semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both the calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^3 4s^2$) element can be as a platform for studying the influence of magnetic impurities to the topological properties.
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Received: 03 November 2020
Published: 06 January 2021
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| Fund: Supported by the National Key R&D Program of China (Grant No. 2016YFA0300402), the National Natural Science Foundation of China (Grant Nos. 12074335 and 11974095), the Zhejiang Natural Science Foundation (Grant No. LY16A040012), and the Fundamental Research Funds for the Central Universities. |
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