| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The 2D InSe/WS$_2$ Heterostructure with Enhanced Optoelectronic Performance in the Visible Region |
| Lu-Lu Yang1, Jun-Jie Shi2, Min Zhang3, Zhong-Ming Wei4, Yi-Min Ding2, Meng Wu2, Yong He3, Yu-Lang Cen2, Wen-Hui Guo2, Shu-Hang Pan2, Yao-Hui Zhu1** |
1Physics Department, Beijing Technology and Business University, Beijing 100048
2State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
3College of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010022
4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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Lu-Lu Yang, Jun-Jie Shi, Min Zhang et al 2019 Chin. Phys. Lett. 36 097301 |
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Abstract Two-dimensional (2D) InSe and WS$_2$ exhibit promising characteristics for optoelectronic applications. However, they both have poor absorption of visible light due to wide bandgaps: 2D InSe has high electron mobility but low hole mobility, while 2D WS$_2$ is on the contrary. We propose a 2D heterostructure composed of their monolayers as a solution to both problems. Our first-principles calculations show that the heterostructure has a type-II band alignment as expected. Consequently, the bandgap of the heterostructure is reduced to 2.19 eV, which is much smaller than those of the monolayers. The reduction in bandgap leads to a considerable enhancement of the visible-light absorption, such as about fivefold (threefold) increase in comparison to monolayer InSe (WS$_2$) at the wavelength of 490 nm. Meanwhile, the type-II band alignment also facilitates the spatial separation of photogenerated electron-hole pairs; i.e., electrons (holes) reside preferably in the InSe (WS$_2$) layer. As a result, the two layers complement each other in carrier mobilities of the heterostructure: the photogenerated electrons and holes inherit the large mobilities from the InSe and WS$_2$ monolayers, respectively.
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Received: 12 January 2019
Published: 23 August 2019
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| PACS: |
73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11404013, 11474012, 11364030, 61622406, 61571415, 51502283 and 11605003, the National Key Research and Development Program of China under Grant No 2017YFA0206303, the MOST of China, and the 2018 Graduate Research Program of Beijing Technology and Business University. |
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